Product Layer Removal via Dissolving Solution
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Solution Overview
Problem
Existing methods for processing silicon oxide layers in semiconductor manufacturing are inefficient, requiring repeated etching and sublimation processes to achieve the desired thickness, leading to complex and time-consuming procedures.
Innovation Solution
A method involving the use of a dissolving solution, such as a mixed solution of aqueous ammonia and hydrogen peroxide, to selectively dissolve and remove the product layer, while the substrate and dielectric layer remain insoluble, thereby eliminating the need for repeated etching and sublimation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If repeated etching and sublimation processes are used to remove the product layer, then the product layer can be removed, but the processing time increases and the process complexity increases
Solution Approach 1:
The patent changes the chemical parameters by introducing a specifically formulated dissolving solution containing ammonium fluoride, hydrogen fluoride, and water in controlled ratios. This chemical parameter change enables single-step removal of the product layer, eliminating the need for repeated thermal etching and sublimation cycles, thus reducing processing time while maintaining complete removal effectiveness.
Solution Approach 2:
The dissolving solution acts as an intermediary chemical agent that selectively reacts with the product layer (ammonium fluorosilicate) formed during dielectric etching. This intermediary solution facilitates the conversion of the product layer into soluble compounds that can be easily rinsed away, replacing the time-consuming thermal processing steps with a efficient chemical dissolution process.
2Manufacturing precision
If repeated etching and sublimation processes are used to remove the product layer, then the product layer can be removed, but the process complexity increases
Solution Approach 1:
The patent merges multiple separate process steps (etching, product layer formation, sublimation, and cleaning) into a single integrated chemical dissolution step. The dissolving solution simultaneously performs the functions of removing the product layer and preparing the surface for subsequent processing, thereby simplifying the overall process flow and reducing the number of equipment transitions required.
Solution Approach 2:
The patent extracts the product layer removal function from the thermal processing sequence and isolates it into a dedicated chemical dissolution step. By separating this function and applying a specialized chemical solution, the complex thermal cycling process is replaced with a simpler, more controlled chemical treatment that achieves the same removal objective with fewer process variables to manage.
3Reliability
If conventional cleaning methods are used after etching, then the silicon oxide surface can be cleaned, but additional processing steps are required
Solution Approach 1:
The dissolving solution is designed to perform multiple functions simultaneously: it dissolves the ammonium fluorosilicate product layer, cleans the silicon oxide surface, and prepares the surface for subsequent processing steps. This multi-functional solution eliminates the need for separate cleaning operations, thereby improving productivity while maintaining high surface quality and process reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases removal efficiency, reduces processing time, and simplifies the method by ensuring the product layer can be removed in a single step, improving overall processing efficiency and reducing the complexity of the semiconductor manufacturing process.
Implementation Method 1
removing the product layer by providing a dissolving solution and using the dissolving solution to rinse or soak the product layer to dissolve the product layer
Implementation Method 2
silicon oxide may be removed by chemical reactions between the gas molecules and silicon oxide
Data Source
AI summary
A method for processing a product layer includes providing a dielectric layer over a substrate, etching to remove a portion of the dielectric layer, forming a product layer over the etched dielectric layer, and removing the product layer by providing a dissolving solution and using the dissolving solution to rinse or soak the product layer to dissolve the product layer.