Production method for composite material
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Solution Overview
Problem
The existing production methods for ceramic matrix composites (CMCs) using silicon carbide films have low productivity due to low infiltratability and require extended processing times to ensure film uniformity, limiting the efficiency of weight reduction and fuel efficiency in high-temperature applications like aircraft jet engines.
Innovation Solution
A production method involving a chemical vapor deposition or infiltration process where a silicon source, chlorine source, and carbon source react to form a silicon carbide film on a porous substrate, utilizing SiCl2 or SiCl gases to enhance infiltratability and uniformity, with a reaction pressure of 0.1 to 20 Torr and using hydrocarbons like CH4 as carbon sources, which improves the formation rate and uniformity of the silicon carbide film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the growth rate of the silicon carbide film is reduced to ensure uniformity, then the uniformity of the silicon carbide film is improved, but the processing time increases to 100 to 200 hours and productivity decreases
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using SiCl2 or SiCl gases instead of traditional silicon source gases. This parameter change enables the silicon carbide film to be deposited at a higher growth rate while maintaining uniformity, resolving the contradiction between film quality and production efficiency
Solution Approach 2:
The patent introduces SiCl2 or SiCl gases as intermediary substances that facilitate the deposition process. These intermediary gases enable better infiltratability into the fiber substrate and promote uniform film formation at accelerated rates, thereby improving both uniformity and productivity simultaneously
2Productivity
If the infiltratability of silicon carbide is low, then the uniformity of the silicon carbide film is compromised, but increasing the growth rate to improve productivity reduces infiltratability and uniformity
Solution Approach 1:
The patent changes the chemical composition parameters by using SiCl2 or SiCl gases which have superior infiltratability properties compared to traditional silicon sources. This parameter change allows the silicon carbide to penetrate and deposit uniformly throughout the porous fiber substrate at higher growth rates
Solution Approach 2:
The SiCl2 or SiCl gases act as intermediary carriers that enhance the infiltratability of silicon carbide into the fiber substrate. These intermediaries facilitate uniform distribution and deposition throughout the porous structure, enabling high growth rates without sacrificing uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of composite materials with high productivity and excellent uniformity of the silicon carbide film on fiber substrates, enhancing infiltratability and reducing processing time, thus improving the material's high-temperature strength and weight reduction capabilities.
Implementation Method 1
forming the silicon carbide film on the surface of the fiber using the CVD method or the CVI method
Implementation Method 2
forming the silicon carbide film on the surface of the fiber using the CVD method or the CVI method
Implementation Method 3
a product generated by bringing the silicon source into contact with the chlorine source may react with a gas of the carbon source
Data Source
AI summary
A production method for a composite material, which includes a porous substrate and a silicon carbide film formed on a surface of a material forming the porous substrate, includes causing a silicon source containing a silicon atom, a chlorine source containing a chlorine atom, and a carbon source containing a carbon atom to react with each other to form the silicon carbide film on the surface of the material forming the porous substrate.