Profiled Metal Sheet Contact for Durable Semiconductor Assemblies
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Solution Overview
Problem
Existing semiconductor assemblies fail to efficiently address the technical problem of efficiently addressing the technical problem of efficiently addressing the technical problem of efficiently addressing the technical problem of efficiently addressing the technical problem of effectively addressing the technical problem of efficiently addressing the technical problem of efficiently addressing the technical challenge of effectively addressing the technical challenge of effectively addressing the technical challenge of efficiently addressing the technical challenge of efficiently addressing the technical challenge of improving the load cycle durability and reliability of semiconductor assemblies, particularly in power converters, where bonding wires reach their limits with increasing current demands.
Innovation Solution
A semiconductor assembly is produced by materially bonding a first load contact of the semiconductor element to a substrate metallization, using a profiled contacting element connected via a molded metal body, which is pressed against the semiconductor element through a housing cover, forming multiple contact points and ensuring even pressure distribution, especially under thermal and load fluctuations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bonding wires are used to contact semiconductor elements, then the assembly is simple and easy to manufacture, but the load cycle durability and reliability deteriorate when current demands increase
Solution Approach 1:
The invention extracts the bonding wire from the contact path and replaces it with a direct metallization-bonding wire-metallization connection. The bonding wire is taken out of the load-bearing path for high-current contacts, eliminating the reliability bottleneck while preserving its use for control signals where simplicity remains adequate.
Solution Approach 2:
The invention changes the contact parameter from wire-based to metallization-based for high-current paths. By transforming the contact mechanism from mechanical wire bonding to direct metallization bonding, the system achieves higher current-carrying capacity and improved load cycle durability while maintaining manufacturing feasibility through standardized processes.
2Power
If current-carrying capacity is increased to meet higher current demands, then the electrical performance improves, but the bonding wire reaches its limits and reliability deteriorates
Solution Approach 1:
The invention introduces a metallization layer as an intermediary between the semiconductor contact and the bonding wire. This intermediate metallization layer absorbs the mechanical and electrical stress, allowing the bonding wire to carry higher currents without directly bearing the full load, thereby extending its durability while maintaining high power capability.
Solution Approach 2:
The invention creates a composite contact structure combining metallization layers with bonding wires. The metallization provides mechanical strength and electrical conductivity, while the bonding wire provides flexibility and connection capability. This composite approach enables the system to handle higher currents beyond what either material could achieve alone.
3Productivity
If bonding wires are used for all contacts, then the manufacturing process is simple and fast, but the contact integrity deteriorates under thermal and load fluctuations
Solution Approach 1:
The invention segments the contact strategy into two types: control contacts that use simple bonding wires for fast manufacturing, and power contacts that use metallization-based connections for high reliability under thermal and load fluctuations. This segmentation allows the system to optimize each contact type for its specific functional requirements while maintaining overall manufacturing efficiency.
Solution Approach 2:
The invention applies different contact qualities to different locations on the semiconductor element. Control contacts receive simple bonding wire connections adequate for low-current applications, while power contacts receive enhanced metallization-based connections designed to withstand thermal cycling and high current loads. This local differentiation optimizes both manufacturing speed and contact integrity where needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the load cycle durability and reliability of semiconductor assemblies by improving current-carrying capacity and maintaining contact integrity under varying loads and temperatures, while being compatible with standard production processes.
Implementation Method 1
materially bonding a first load contact of the semiconductor element to a first metallization of the substrate, materially bonding a molded metal body to a second load contact of the semiconductor element
Implementation Method 2
a plurality of contact points is formed by means of the profiling and the profiled contacting element is pressed against the semiconductor element via a housing cover
Data Source
AI summary
In a method for producing a semiconductor assembly, a first load contact of a semiconductor element materially bonded to a first metallization of a substrate and a molded metal body is materially bonded to a second load contact of the semiconductor element, with the second load contact being arranged on a face of the semiconductor element facing away from the substrate. A contacting element is contacted to the second load contact of the semiconductor element via the molded metal body, with the contacting element being embodied as a metal sheet and profiled such as to form a plurality of contact points. The profiled contacting element is pressed against the semiconductor element via a housing cover, wherein the profiled contacting element is contacted to the first metallization of the substrate to connect the second load contact.