Threshold-Programmable CMOS Pair for Compact Frequency Multiplication

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current frequency multipliers in wireless communication systems require significant chip area and power due to the incorporation of filtering and amplification circuits, which are inefficient for stable high-frequency oscillations.

Innovation Solution

A reconfigurable CMOS device with threshold voltage-programmable N-type and P-type FETs connected in parallel, allowing for concurrent programming of threshold voltages to operate in multiple modes, such as frequency multiplication, signal transmission, and signal blocking, without the need for extensive filtering and amplification circuits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If filtering and amplification circuits are incorporated into frequency multipliers, then stable high-frequency oscillations can be achieved, but chip area and power consumption increase significantly

Engineering Contradiction:
Improvestable high-frequency oscillationsVSAvoidchip area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent changes the electrical parameters of the FETs by programming their threshold voltages to different values, enabling the same physical circuit to perform multiple functions including frequency multiplication, filtering, and amplification without requiring separate dedicated circuits for each function

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The reconfigurable CMOS device is designed to perform multiple functions (frequency multiplication, filtering, amplification) using a single integrated circuit structure with threshold voltage-programmable FETs, eliminating the need for separate filtering and amplification circuits

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If filtering and amplification circuits are incorporated into frequency multipliers, then stable high-frequency oscillations can be achieved, but power consumption increases significantly

Engineering Contradiction:
Improvestable high-frequency oscillationsVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the electrical parameters of the FETs by programming their threshold voltages to different values, enabling the same physical circuit to perform multiple functions including frequency multiplication, filtering, and amplification without requiring separate dedicated circuits for each function

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The reconfigurable CMOS device is designed to perform multiple functions (frequency multiplication, filtering, amplification) using a single integrated circuit structure with threshold voltage-programmable FETs, eliminating the need for separate filtering and amplification circuits

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Area of stationary object

If threshold voltages of NFET and PFET are concurrently programmed, then device can operate in multiple modes with minimal chip area, but programming complexity increases

Engineering Contradiction:
Improvechip areaVSAvoidprogramming complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges the programming control of multiple FETs into a unified structure where gates are electrically connected, allowing concurrent programming of threshold voltages through shared control signals while maintaining the ability to achieve multiple operating modes

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS20230395605A1Reconfigurable complementary metal oxide semiconductor device and method
Publication Date: 2023.12.07 GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO KG
  • US20230395605A1 patent drawing
  • US20230395605A1 patent drawing
  • US20230395605A1 patent drawing

AI summary

Disclosed is a reconfigurable complementary metal oxide semiconductor (CMOS) device with multiple operating modes (e.g., frequency multiplication mode, etc.). The device includes an N-type field effect transistor (NFET) and a P-type field effect transistor (PFET), which are threshold voltage-programmable, which are connected in parallel, and which have electrically connected gates. The threshold voltages of the NFET and PFET can be concurrently programmed and the operating mode of the device can be set depending upon the specific combination of threshold voltages achieved in the NFET and PFET. Optionally, the threshold voltages of the NFET and PFET can be concurrently reprogrammed to switch the operating mode. Such a device is relatively small and achieves frequency multiplication and other functions with minimal power consumption. Also disclosed are methods for forming the device and for reconfiguring the device (i.e., for concurrently programming the NFET and PFET to set or switch operating modes).