Programmable e-Fuse Structure With Parallel Transistors
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Solution Overview
Problem
Existing electrically programmable fuse (e-fuse) devices in semiconductor devices are one-time-programmable and lack efficient design optimization, which affects their programming current and reliability.
Innovation Solution
The semiconductor device incorporates a substrate with a first and second insulative film, electrodes, impurity regions, and a capping layer, where the second electrode is designed to increase programming current by being disposed over the first electrode, and the impurity regions are arranged to form transistors electrically connected in parallel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing e-fuse device design is used, then device simplicity is maintained, but programming current is insufficient and reliability is poor
Solution Approach 1:
The e-fuse device is segmented into multiple functional regions including first and second impurity regions, first and second electrodes, insulative films, and a capping layer. This segmentation allows each component to be optimized independently for its specific function while contributing to overall reliability improvement.
Solution Approach 2:
The patent introduces a vertical stacking dimension with multiple insulative films (first and second insulative films) and electrodes arranged at different heights. The second electrode is disposed over the first electrode, creating a three-dimensional structure that increases programming current through additional conduction paths without significantly increasing planar footprint.
2Power
If programming voltage is increased to improve programming current, then energy consumption increases and device stress increases
Solution Approach 1:
The patent changes the structural parameters of the e-fuse device, specifically introducing multiple impurity regions with different doping concentrations and multiple electrodes at different positions. This structural parameter change enables increased programming current through enhanced electric field distribution and multiple conduction paths, allowing effective programming at lower voltage levels and reduced energy consumption.
Data Source
AI summary
The present application provides a semiconductor device. The semiconductor device includes a substrate, a first insulative film, a second insulative film, a first electrode, a second electrode, a capping layer, a plurality of first impurity regions and a plurality of second impurity regions. The first insulative film is disposed on the substrate. The second insulative film at least partially surrounds the first insulative film. The first electrode and the capping layer, covering the first electrode, are disposed on the first insulative film. The second electrode is disposed over the second insulative film and covers the capping layer. The first and second impurity regions are disposed in the substrate. Each of the first impurity regions extends under and across the second electrode and the first electrode. The second impurity regions are exposed through the second insulative film and the second electrode.