Wafer-Scale Programmable Films for Semiconductor Planarization
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Solution Overview
Problem
Nanoimprint lithography, particularly Jet and Flash Imprint Lithography (J-FIL), faces challenges with bubble trapping and achieving non-uniform pattern densities due to discrete drop deposition, which is difficult to manage especially in large-area printing formats like display glass configurations.
Innovation Solution
The implementation of a Programmable Film Imprint Lithography (P-FIL) method using an inverse optimization scheme to control the process parameters for a liquid resist formulation, allowing for a substantially continuous and non-uniform film formation on substrates through spin-coating, inkjetting, or slot die coating, which is then cured and separated from a template to achieve desired patterns and planarization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If discrete drops are used for material deposition in J-FIL, then pattern density based adaptive material placement is enabled, but bubble trapping occurs during the merging process
Solution Approach 1:
The patent extracts and removes bubbles from the liquid resist formulation before the imprinting process by sparging the liquid resist with inert gas (such as nitrogen or argon) to eliminate dissolved gases and form a degassed state, thereby preventing bubble trapping during drop merging
Solution Approach 2:
The patent uses an inert gas atmosphere (nitrogen or argon) during the material deposition and imprinting process to prevent oxidation and minimize bubble formation, creating a controlled environment that reduces harmful gas-related effects
2Object-affected harmful factors
If process gases such as carbon dioxide or Helium are used to minimize bubble trapping, then bubble trapping is reduced, but it becomes difficult to cover the entire substrate area including the center in large-area printing formats
Solution Approach 1:
The patent extracts and removes bubbles from the liquid resist formulation before the imprinting process by sparging the liquid resist with inert gas (such as nitrogen or argon) to eliminate dissolved gases and form a degassed state, thereby preventing bubble trapping during drop merging
Solution Approach 2:
The liquid resist formulation is pre-degassed and sealed in a bubble-free state before use, making the material itself self-sufficient and eliminating the need for continuous process gas coverage during the imprinting process
3Stability of the object's composition
If spin-coating is used to form a substantially continuous film, then uniform film coverage is achieved, but precise control over film thickness in non-uniform patterns becomes challenging
Solution Approach 1:
The patent applies local quality by using inkjet printing to deposit liquid resist material with spatially varying drop sizes and spacing, creating regions of different material densities that correspond to the desired pattern density variation, thereby achieving both uniform coverage and precise thickness control in different areas
Solution Approach 2:
The patent uses a dynamic approach by controlling the inkjet printing parameters (drop size, spacing, frequency) in real-time based on the desired pattern requirements, allowing adaptive adjustment of film thickness and distribution to match the target pattern geometry
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
P-FIL effectively addresses bubble trapping and non-uniform pattern density issues by ensuring precise control over film thickness and pattern formation, enabling efficient and high-resolution patterning on large areas without the need for process gases, while maintaining optimal residual layer thickness and material distribution.
Implementation Method 1
covering a substrate with a substantially continuous film of the liquid resist formulation using spin-coating
Implementation Method 2
evaporating the solvent substantially from the liquid resist formulation forming a film
Implementation Method 3
curing the film to polymerize the film
Data Source
AI summary
A method for fabricating patterns. An inverse optimization scheme is implemented to determine process parameters used to obtain a desired film thickness of a liquid resist formulation, where the liquid resist formulation includes a solvent and one or more non-solvent components. A substrate is covered with a substantially continuous film of the liquid resist formulation using one or more of the following techniques: dispensing discrete drops of a diluted monomer on the substrate using an inkjet and allowing the dispensed drops to spontaneously spread and merge, slot die coating and spin-coating. The liquid resist formulation is diluted in the solvent. The solvent is then substantially evaporated from the liquid resist formulation forming a film. A gap between a template and the substrate is then closed. The film is cured to polymerize the film and the substrate is separated from the template leaving the polymerized film on the substrate.