Programmable Semiconductor Structure for Programming Voltage Isolation
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Solution Overview
Problem
The scaling down of semiconductor devices poses challenges in achieving improved quality, yield, performance, and reliability while reducing complexity, particularly due to issues related to increased high programming voltage leakage currents.
Innovation Solution
A semiconductor device design that integrates a programmable structure with the drain region associated with the gate structure as the lower conductor, reducing occupied area and using the gate structure as an isolation transistor to mitigate high programming voltage effects, thereby enhancing performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the programmable structure is designed with separate drain region and gate structure, then the fabrication process is simpler, but the occupied area is larger and programming voltage leakage affects adjacent elements
Solution Approach 1:
The patent merges the drain region of the programmable structure with the drain region of the transistor, creating a shared drain region. This integration reduces the total occupied area while the gate structure serves dual functions for both the transistor and programmable structure, simplifying the overall fabrication process despite the integrated design
2Reliability
If the gate structure is used as isolation transistor, then high programming voltage leakage is reduced, but the device complexity increases
Solution Approach 1:
The gate structure is designed to perform multiple functions: it serves as the control gate for the transistor, the control gate for the programmable structure, and simultaneously acts as an isolation transistor to prevent programming voltage leakage to adjacent elements. This multi-functionality reduces the need for additional isolation structures
3Quantity of substance
If the scaling down process is continued to improve computing ability, then device density increases, but quality, yield, performance and reliability deteriorate
Solution Approach 1:
The patent merges multiple functions into shared structures: the drain region serves both the transistor and programmable structure, and the gate structure controls both elements. This integration reduces the total area occupied, allowing higher device density while maintaining reliable voltage isolation and reducing interference between adjacent elements
Solution Approach 2:
The gate structure acts as an intermediary element that isolates the high programming voltage from adjacent elements while still enabling control of the programmable structure. This mediator function protects adjacent elements from voltage leakage and maintains device reliability during scaling
Data Source
AI summary
The present application discloses a semiconductor device, including a substrate; an isolation layer positioned in the substrate and defining an active area of the substrate, wherein the active area includes a transistor portion and a programmable portion extending from the transistor portion; a gate structure positioned on the transistor portion; a drain region positioned in the programmable portion and the transistor portion, and adjacent to the gate structure; a source region positioned in the transistor portion, adjacent to the gate structure, and opposite to the drain region with the gate structure interposed therebetween; a middle insulating layer positioned on the programmable portion; and an upper conductive layer positioned on the middle insulating layer. The drain region in the programmable portion, the middle insulating layer, and the upper conductive layer together configure a programmable structure.