Programmable Via Link With Semiconductor-Metal Migration

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Solution Overview

Problem

Conventional one-time programmable (OTP) memories using electromigration or thermal rupture based fuse techniques require high voltages and currents, making them unsuitable for advanced technology nodes and limited to storing digital information, as they cannot facilitate controlled partial open-circuiting for analog data storage.

Innovation Solution

A programmable via device with a via link comprising a semiconductor and metal portion, where a programming current is applied to migrate materials between the semiconductor and metal portions, altering the electrical resistance, allowing for controlled programming and storage of both digital and analog information.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional electromigration or thermal rupture based fuse techniques are used for OTP programming, then digital information can be stored, but high voltages and currents are required which damage on-chip semiconductor devices in advanced technology nodes

Engineering Contradiction:

Improvecompatibility with advanced technology nodesVSAvoidhigh programming voltages and currents

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent changes the programming mechanism from catastrophic failure (high voltage/current) to controlled material migration (low voltage/current). The via link uses material migration between semiconductor and metal portions to alter electrical resistance, enabling programming at low voltages and currents compatible with advanced technology nodes while eliminating the harmful high-voltage programming requirement

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The via link is constructed as a composite structure with both semiconductor and metal portions. This composite material approach enables controlled material migration when programming current is applied, allowing the via link to transition between different resistance states without requiring catastrophic failure, thus resolving the contradiction between reliable programming and device safety

Inventive Principle:

Principle #40Composite materials

2Adaptability or versatility

If conventional e-fuse techniques are used, then digital information storage is achieved, but the catastrophic failure cannot be controlled to allow for partial open-circuiting for continuous non-binary information storage

Engineering Contradiction:

Improvestorage of continuous non-binary informationVSAvoidcontrolled partial open-circuiting

Core Design Contradiction:

Adaptability or versatilityVSEase of operation

Solution Approach 1:

The via link provides dynamic resistance states through controlled material migration. By applying programming current for different durations or at different levels, the migration of material between the semiconductor and metal portions can be controlled to achieve various intermediate resistance states, enabling storage of continuous non-binary information rather than just binary states

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent changes the programming mechanism from catastrophic binary failure to controlled parameter variation. The electrical resistance of the via link can be continuously adjusted by controlling the amount of material migration, enabling precise control over resistance values to store analog or non-binary digital information

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables low-voltage, low-power programming compatible with advanced technology nodes, allowing for the storage of continuous non-binary information by varying the resistance of the via link, thus overcoming the limitations of conventional OTP memories.

Implementation Method 1

applying a programming current through the via link to migrate materials between the semiconductor portion and the metal portion

Methodology Applied

Scientific EffectElectromigration:

Data Source

PatentUS10056331B2Programmable via devices with metal/semiconductor via links and fabrication methods thereof

Publication Date: 2018.08.21 GLOBALFOUNDRIES US INC

AI summary

Programmable via devices and fabrication methods thereof are presented. The programmable via devices include, for instance, a first metal layer and a second metal layer electrically connected by a via link. The via link includes a semiconductor portion and a metal portion, where the via link facilitates programming of the programmable via device by applying a programming current through the via link to migrate materials between the semiconductor portion and the metal portion to facilitate a change of an electrical resistance of the via link. In one embodiment, the programming current facilitates formation of at least one gap region within the via link, the at least one gap region facilitating the change of the electrical resistance of the via link.