Programmable Voltage Generator for Nonvolatile Memory
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Solution Overview
Problem
The existing programmable voltage generators in nonvolatile memory devices often provide voltages higher than the breakdown voltage of the load devices, leading to potential failure and requiring different limiting circuits for various semiconductor processes, increasing design time and cost.
Innovation Solution
A programmable voltage generator comprising a power circuit, detector, switching circuit, control signal generator, and regulation circuit that dynamically adjusts the programming voltage to be below the breakdown voltage of the nonvolatile memory device, using a detector to identify when the voltage exceeds the safe threshold and a switching circuit to temporarily drop the voltage, ensuring safe operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the programming voltage is increased to shorten programming time, then productivity is improved, but the voltage may exceed the breakdown voltage causing device failure
Solution Approach 1:
The patent implements a feedback mechanism where the detector continuously monitors the programming voltage and compares it with the breakdown voltage. When the voltage approaches the breakdown threshold, the detector generates a signal that triggers the switching circuit to reduce the voltage, preventing device damage while enabling high-speed programming when safe
Solution Approach 2:
The patent transforms the static voltage limiting approach into a dynamic system where the programming voltage can rapidly adjust between high levels (for fast programming) and low levels (for safety). The switching circuit enables temporal dropping of voltage based on real-time detector signals, allowing the system to operate at maximum safe power continuously
2Manufacturing precision
If different limiting circuits are designed for different semiconductor processes, then manufacturing precision is improved, but device complexity and design time increase
Solution Approach 1:
The patent creates a universal limiting circuit design where the detector and switching circuit work together with any power circuit regardless of semiconductor process. The detector is configured to detect whether programming voltage exceeds breakdown voltage, and the switching circuit responds universally by temporally dropping voltage when needed, eliminating the need for process-specific limiting circuits
Solution Approach 2:
The patent achieves adaptability to different semiconductor processes by changing the detector configuration parameters (such as threshold voltage settings) rather than redesigning the entire limiting circuit. This allows the same circuit topology to work across different processes by adjusting detection thresholds to match each process's specific breakdown voltage characteristics
Data Source
AI summary
An exemplary embodiment of the present disclosure provides a programming voltage generator for a nonvolatile memory device. The programming voltage generator comprises a power circuit, a detector, a switching circuit, a control signal generator, and a regulation circuit. The power circuit outputs a programming voltage according to a voltage control signal. The detector detects whether the programming voltage is larger than or equal to a breakdown voltage of the nonvolatile memory device, so as to output an indication signal. The switching circuit temporally drops the programming voltage according to the indication signal. The control signal generator generates a plurality of regulation control signals. The regulation circuit generates the voltage control signal according to the programming voltage and the regulation control signals.