Programmable Voltage Reference for Non-Volatile Memory
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Solution Overview
Problem
Existing non-volatile memory devices face challenges with manufacturing tolerances affecting bias voltage levels, requiring costly redesigns and iterations, and are unable to adjust for operating temperature changes without significant re-manufacturing, leading to inefficiencies and reduced production yield.
Innovation Solution
A programmable voltage reference and current reference system using a Digital to Analog Converter (DAC) with a resistor network and multiplexers allows for precise control of bias voltages, independent of device dimensions, enabling adjustments for manufacturing tolerances and temperature changes without redesigning the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If fixed bias voltage levels are used based on device dimensions, then manufacturing process is simpler, but manufacturing tolerances cause voltage level inaccuracies requiring costly redesigns
Solution Approach 1:
The patent implements a programmable voltage reference system where bias voltage levels can be dynamically adjusted through digital programming rather than being fixed by physical device dimensions. This allows the system to adapt to manufacturing tolerances and operating conditions by changing voltage levels through software control, eliminating the need for costly redesigns while maintaining manufacturing simplicity.
Solution Approach 2:
The invention changes the approach from fixed physical parameters (device dimensions determining voltage levels) to programmable parameters (digital codes controlling voltage levels). By using a resistor network with selectable connections controlled by digital-to-analog converters, the system can precisely adjust bias voltage levels to compensate for manufacturing variations without requiring redesign of the physical device structure.
2Manufacturing precision
If device redesign is performed to compensate for manufacturing tolerances, then bias voltage precision improves, but production cost and time increase
Solution Approach 1:
The patent incorporates a programmable voltage reference system during the initial device fabrication that allows for later adjustment of bias voltage levels. This preliminary action enables the system to be manufactured with standard tolerances, and then individually calibrated after fabrication to achieve precise voltage levels, thereby maintaining high production yield while ensuring accuracy.
Solution Approach 2:
The invention enables each memory device to self-calibrate its bias voltage levels through an integrated programmable reference system. Rather than requiring external intervention or redesign for each device, the system automatically adjusts voltage levels based on manufacturing variations, allowing for high-volume production with maintained precision.
3Adaptability or versatility
If fixed bias voltages are used, then device structure is simpler, but temperature changes affect operation requiring re-manufacturing
Solution Approach 1:
The patent implements a programmable voltage reference system that can respond to temperature changes by adjusting bias voltage levels. The system uses feedback mechanisms where temperature sensors or monitoring circuits detect temperature variations and trigger adjustments to the voltage reference levels through digital programming, allowing the device to maintain optimal operation across temperature ranges without physical redesign.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides precise control over bias voltages, reduces the need for costly redesigns, and allows for adaptive operation across varying conditions, enhancing the efficiency and yield of non-volatile memory devices.
Implementation Method 1
A programmable voltage reference and current reference system using a Digital to Analog Converter (DAC) with a resistor network and multiplexers allows for precise control of bias voltages
Implementation Method 2
The resistor network is connected between a first supply voltage and a second supply voltage, different bias voltages for respective read, program and erase operations can be derived from the resistor network
Data Source
AI summary
A non-volatile memory device includes a voltage reference generator comprising a programmable voltage reference for generating a voltage signal having a programmable voltage level. In an embodiment, the programmable voltage reference provides the voltage signals for a wordline driver and/or a bitline current generator of the non-volatile memory device. The programmable voltage reference may comprise a Digital-to-Analog converter coupled between first and second supply voltages. A programmable current reference is also disclosed.