Integrated Protection Diodes for Plasma Damage in Semiconductor Cells
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Solution Overview
Problem
Plasma processing during semiconductor manufacturing can cause damage to gate dielectrics and other components due to high current density and charge collection, leading to performance degradation in devices like MOSFETs and MIM capacitors.
Innovation Solution
Integration of protection diodes and bias structures that provide current drain paths to reduce current density, forming a discharge path and preventing latch-up and body effects, using contact lines to connect bias structures to protection diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma processing is used during semiconductor manufacturing, then device fabrication can be achieved, but high current density and charge collection cause damage to gate dielectrics and components
Solution Approach 1:
The patent applies preliminary action by forming protection diodes and bias structures before plasma processing occurs. These structures are pre-integrated into the semiconductor device to provide immediate protection during subsequent plasma manufacturing steps, preventing charge accumulation and current density issues before they can cause damage to gate dielectrics
Solution Approach 2:
The protection diodes and bias structures serve as intermediary elements between the plasma processing environment and the sensitive gate dielectrics. These intermediaries provide discharge paths that safely channel away harmful charges and current, mediating the interaction between plasma and vulnerable components to prevent direct damage
2Productivity
If device size is reduced through miniaturization, then performance and cost improve, but protection structures become more difficult to integrate
Solution Approach 1:
The patent merges the protection diodes and bias structures with the main device structures, integrating them into the same semiconductor substrate and process flow. This combining approach allows protection functionality to be added without requiring separate fabrication steps or additional chip area, thus maintaining productivity benefits while providing necessary protection
Solution Approach 2:
The bias structures serve multiple functions: they provide biasing for device operation and simultaneously serve as protection structures by providing discharge paths for plasma-induced charges. This multi-functionality reduces the need for separate protection components, simplifying integration in miniaturized devices
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces plasma-induced damage by mitigating current density and charge collection, thereby preserving device performance and preventing degradation of gate dielectrics and other semiconductor components.
Implementation Method 1
Integration of protection diodes and bias structures that provide current drain paths to reduce current density
Data Source
AI summary
A semiconductor structure comprises at least one bias structure comprising a first diffusion region having a designated doping type, and at least one protection diode comprising a second diffusion region having the designated doping type, wherein the at least one bias structure is connected to the at least one protection diode through at least one contact line.