Protection Trench Design for Semiconductor Crack Prevention
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Solution Overview
Problem
Existing semiconductor devices face challenges in preventing cracks from propagating during the wafer dicing process, which can damage the device regions due to the lack of effective protection mechanisms.
Innovation Solution
A semiconductor device design incorporating a protection trench with a width different from the protection pattern, which surrounds the device region and is disposed within an insulation structure, effectively blocks cracks generated during the dicing process by overlapping the protection pattern and extending along it, thereby preventing crack propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protection pattern is disposed on the substrate to prevent cracks, then crack propagation is blocked, but the protection pattern alone is insufficient to fully prevent crack propagation into the device region
Solution Approach 1:
The patent implements a nested protection structure where a protection trench is formed within the insulation structure that overlaps and extends along the protection pattern. The protection trench has a width different from the protection pattern, creating a multi-layered protective system where the trench enhances the protection pattern's crack-blocking capability without completely replacing it.
Solution Approach 2:
The patent transitions from a two-dimensional protection pattern on the substrate surface to a three-dimensional protection structure by forming a protection trench within the insulation structure. This adds vertical dimensionality and spatial extension to the protection mechanism, creating overlapping protection zones that more effectively block crack propagation paths.
2Reliability
If the protection trench width is made different from the protection pattern width, then crack propagation is more effectively blocked, but the manufacturing precision requirements increase
Solution Approach 1:
The patent applies different width characteristics to different portions of the protection structure. The protection trench has a width that is intentionally made different from the protection pattern width, creating localized variations in the protection structure that enhance crack blocking at specific critical regions while maintaining overall structural integrity.
Data Source
AI summary
A semiconductor device includes a substrate including a first region and a second region at least partially surrounding the first region in a plan view. A protection pattern is disposed on the second region of the substrate and at least partially surrounds the first region of the substrate in the plan view. A protection trench overlaps the protection pattern and at least partially surrounds the first region of the substrate in the plan view, along the protection pattern. A width of the protection trench is different from a width of the protection pattern.