Protective Film Forming Method for Semiconductor Recesses
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Solution Overview
Problem
Existing methods for forming protective films in semiconductor manufacturing face challenges in accurately depositing films at desired locations, especially with miniaturization, where lithography limitations make it difficult to form contact holes and adjust film shapes, and thicker films tend to grow laterally, covering recess openings.
Innovation Solution
A protective film forming method involving the deposition of an oxide film of organic metal or metalloid compounds on flat surfaces between recessed shapes, followed by etching to remove lateral growth, allowing for controlled upward growth and precise shaping of the film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If the film deposition process is repeated to make the protective film thicker, then the protective film thickness is increased, but the protective film grows laterally and covers part of openings of the recesses
Solution Approach 1:
The patent applies preliminary action by forming a mask pattern before the protective film deposition. The mask pattern is prepared in advance to define the desired film shape, preventing lateral growth during repeated deposition cycles. This allows thick protective films to be formed without the film covering recess openings, as the pre-formed mask controls the deposition geometry throughout the process.
Solution Approach 2:
The patent implements local quality by creating a mask pattern with spatially varying properties - the mask has different thicknesses and material compositions in different regions. This allows the protective film to be deposited with controlled lateral growth in specific areas while preventing it in other areas, enabling thick film formation that maintains proper shape control and does not cover recess openings.
2Manufacturing precision
If lithography is used to form a protective film regionally, then the protective film can be formed at desired locations, but it is very difficult to leave such a protective film regionally due to limits of lithography accuracy
Solution Approach 1:
The patent uses an intermediary approach by introducing a separate mask pattern layer that mediates between the lithography process and the protective film deposition. The mask pattern acts as an intermediary structure that translates lithography patterns into controlled protective film formation, allowing regional protective film formation with improved accuracy that overcomes direct lithography limitations.
Solution Approach 2:
The patent applies segmentation by dividing the protective film formation process into distinct stages: mask pattern formation and protective film deposition. This segmentation allows the mask pattern to be optimized for lithography accuracy while the protective film deposition is optimized for thickness and shape control, achieving regional protective film formation that overcomes the limitations of using lithography alone.
3Manufacturing precision
If a mask is formed to create a contact hole with the same size as the target, then the contact hole size is accurate, but producing such a mask is getting difficult with miniaturization
Solution Approach 1:
The patent applies dimensionality change by transitioning from two-dimensional planar masks to three-dimensional mask patterns with varying thicknesses and profiles. This allows the mask to provide both size control and shape control in multiple dimensions, enabling accurate contact hole formation with miniaturization while simplifying mask production through self-aligned deposition processes.
Solution Approach 2:
The patent uses parameter changes by varying mask material properties such as thickness, composition, and deposition conditions across different regions of the mask pattern. This allows the mask to be optimized for both size accuracy and ease of manufacture, with different parameters in different regions enabling accurate contact hole formation without the difficulties associated with conventional uniform masks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of thick protective films that grow primarily upward without blocking recess openings, addressing the challenges of miniaturization and improving lithography accuracy by allowing for selective and precise film deposition.
Implementation Method 1
an oxide film of either an organic metal compound or an organic metalloid compound is deposited on a flat surface region between adjacent recessed shapes
Implementation Method 2
a lateral portion of the oxide film deposited on the flat surface region is removed by etching
Data Source
AI summary
A protective film forming method is provided. In the method, an oxide film of either an organic metal compound or an organic metalloid compound is deposited on a flat surface region between adjacent recessed shapes formed in a surface of a substrate. Then, a lateral portion of the oxide film deposited on the flat surface region is removed by etching.