Protective Layer Etching Sequence for Contamination-Free Chamber Cleaning
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Solution Overview
Problem
Existing methods for protecting apparatuses from etching materials, such as aluminum components, are inadequate in preventing contamination and damage during cleaning processes, particularly when using fluorine-based etching agents, which react to form harmful by-products like aluminum fluoride.
Innovation Solution
A method involving the formation of a protective layer with a low etch rate relative to the etching material, followed by a seasoning layer, allows for the suppression of etching material contact during processing, and subsequent removal of these layers without disassembling the apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective layer is formed on aluminum components before cleaning, then the apparatus is protected from etching material contamination, but the cleaning process becomes more complex requiring multiple etching steps
Solution Approach 1:
The protective layer is segmented into two distinct layers: a first protective layer (e.g., aluminum oxide) formed first, and a second protective layer (e.g., silicon oxide or nitrogen-containing protective layer) formed afterward. This segmentation allows each layer to serve specific functions - the first layer provides baseline protection while the second layer provides enhanced protection against fluorine-based etching materials, enabling the cleaning process to be performed in stages with different etching conditions
Solution Approach 2:
The protective layers are formed in advance before the cleaning process begins. The first protective layer is formed by exposing aluminum components to oxygen plasma or oxidizing atmosphere, and the second protective layer is subsequently formed by depositing silicon oxide or nitrogen-containing materials. This preliminary action ensures protection is in place before any etching occurs, preventing contamination during the cleaning process
2Reliability
If existing protective layer methods are used, then some protection is provided, but additional protective layers are required to achieve sufficient protection against fluorine-based etching
Solution Approach 1:
The protective system uses composite material structure combining different materials with complementary properties. The first protective layer (aluminum oxide) provides good adhesion and baseline protection, while the second protective layer (silicon oxide or nitrogen-containing material) provides enhanced resistance to fluorine-based etching materials. This composite structure achieves superior protection effectiveness compared to single-layer approaches
3Manufacturing precision
If the protective layer is removed with strong etching, then complete removal is achieved, but the etching material may damage the apparatus components
Solution Approach 1:
The cleaning process uses partial action by removing only the protective layers without excessive etching into the underlying aluminum components. The first cleaning step removes the second protective layer with fluorine-based etching material, and the second cleaning step removes the first protective layer with oxygen plasma or oxidizing atmosphere. This controlled partial removal ensures complete protective layer elimination while preventing damage to the apparatus components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents contamination and damage to apparatus components by etching materials, enhances productivity through multiple processing cycles, and maintains apparatus integrity without reassembly.
Implementation Method 1
The protective layer having a low etch rate with respect to the first etching material may suppress contact of the first etching material with the exposed surface of the apparatus
Implementation Method 2
The seasoning layer is a layer that has a high etch rate with respect to the first etching material
Implementation Method 3
the protective layer is a layer that has a high etch rate with respect to a second etching material
Implementation Method 4
performing a deposition process comprising loading a wafer into the apparatus in which the protective layer and the seasoning layer are formed, depositing in the apparatus
Data Source
AI summary
There is provided a method of protecting an apparatus from an etching material. The method includes: (a) forming a protective layer on an exposed surface of an apparatus; (b) forming a seasoning layer on the protective layer; (c) performing a deposition process on a wafer that is inserted into the apparatus in which the protective layer and the seasoning layer are formed; (d) removing a deposition film on the seasoning layer of the apparatus in the deposition process and the seasoning layer, with a first etching material; and (e) removing the protective layer, with a second etching material.