Protective Layer for Exposed Semiconductor Die Surfaces
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices are susceptible to external stress such as dust, moisture, and mechanical force, which can cause damage and reduce the package life of exposed surfaces.
Innovation Solution
A protective layer is formed over the exposed surfaces of semiconductor dies, extending to the encapsulant, providing environmental protection and structural support, thereby shielding the devices from external stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If exposed surfaces of semiconductor die are left unprotected, then manufacturing complexity is reduced, but reliability deteriorates due to susceptibility to external stress
Solution Approach 1:
A protective layer is formed over the exposed surfaces of the semiconductor die before final packaging. This preliminary protective action shields the die from external stress such as dust, moisture, and mechanical force during subsequent manufacturing and operation, thereby improving reliability without requiring complete redesign of the packaging structure.
Solution Approach 2:
A thin film protective layer is deposited over the exposed surfaces of the semiconductor die. This thin film provides environmental protection and mechanical strength while maintaining a compact structure. The protective layer extends to the encapsulant, creating a continuous protective barrier that improves package life without significantly increasing device complexity.
2Reliability
If protective layer is formed over exposed surfaces, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The protective layer is formed by controlling deposition parameters such as material composition, layer thickness, and deposition conditions. By optimizing these parameters, the protective layer achieves adequate protection against external stress while maintaining compatibility with existing manufacturing processes, thus improving damage resistance without excessively increasing process complexity.
Solution Approach 2:
The protective layer is formed using composite material structures that combine multiple materials with complementary properties. This composite approach provides enhanced protection against dust, moisture, and mechanical force while maintaining process compatibility. The protective layer extends to the encapsulant, creating a continuous protective barrier that improves reliability without requiring completely new manufacturing equipment or processes.
Data Source
AI summary
A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. A shielding layer is formed between the first and second semiconductor die. An electrical interconnect, such as conductive pillar, bump, or bond wire, is formed between the first and second semiconductor die. A conductive TSV can be formed through the first and second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and electrical interconnect. A heat sink is formed over the second semiconductor die. An interconnect structure, such as a bump, can be formed over the second semiconductor die. A portion of a backside of the first semiconductor die is removed. A protective layer is formed over exposed surfaces of the first semiconductor die. The protective layer covers the exposed backside and sidewalls of the first semiconductor die.