Protective Layer for Chemically Amplified Resist Acid Damage
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Solution Overview
Problem
In photolithography processes for semiconductor and display device manufacturing, the use of chemically amplified resists with high photoacid generator content can damage metal or metal alloy pattern materials, making it difficult to form fine patterns without a post exposure bake process.
Innovation Solution
A method involving the formation of a protective layer on the pattern material layer, using compounds represented by specific formulas, which prevents acid diffusion from the chemically amplified resist and allows for the use of high photoacid generator concentrations without post exposure baking, enabling the formation of fine patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chemically amplified resist with high photoacid generator content is used, then sensitivity and patterning capability are improved, but metal or metal alloy pattern materials are damaged by acid diffusion
Solution Approach 1:
A protective layer comprising silane-based compounds (specifically compounds with formulas (1) and (4) containing Y1=NH2 or OH, X1=halogen or alkoxy group) is introduced as an intermediary between the chemically amplified resist and the metal pattern material layer. This protective layer acts as a barrier that prevents acid diffusion from the resist to the metal, thereby protecting the metal from acid damage while allowing the use of high photoacid generator content resist for improved patterning efficiency.
2Device complexity
If post exposure bake process is omitted to simplify manufacturing, then process complexity is reduced, but fine pattern formation becomes difficult due to acid damage
Solution Approach 1:
The protective layer is formed in advance on the metal pattern material layer before applying the chemically amplified resist. This preliminary action of protecting the metal surface enables the subsequent photolithography process to proceed without requiring a post-exposure bake step, as the protective layer already prevents acid damage during exposure. Thus, fine pattern formation is maintained while process complexity is reduced.
3Object-affected harmful factors
If conventional resist without high photoacid generator content is used, then metal pattern materials are protected, but sensitivity and fine pattern capability are reduced
Solution Approach 1:
The protective layer serves as a mediator that decouples the relationship between resist sensitivity and metal protection. By introducing this intermediate barrier layer, the system can use chemically amplified resist with high photoacid generator content (improving sensitivity and fine pattern capability) while the protective layer simultaneously prevents acid damage to the metal pattern material, thus resolving the contradiction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively protects metal or metal alloy pattern materials from acid damage, allowing for the use of high photoacid generator concentrations in chemically amplified resists, facilitating the formation of fine patterns without the need for post exposure baking in photolithography.
Implementation Method 1
forming a protective layer on the pattern material layer... which prevents acid diffusion from the chemically amplified resist
Implementation Method 2
The protective layer may include a compound represented by the following Formula 1... Y1 is NH2 or OH
Data Source
AI summary
A method of manufacturing a pattern includes forming a pattern material layer on a substrate, forming a protective layer on the pattern material layer, forming a resist layer on the protective layer, selectively exposing the resist layer to light, and developing the selectively exposed resist layer.