Multi-Elevation Protective Ring Layout for Semiconductor Stress Relief

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Solution Overview

Problem

Semiconductor devices face stress-induced damage and defects due to traditional protective rings that extend vertically, leading to issues like corner film delamination and peeling, which affect performance and stability.

Innovation Solution

Implementing a protective ring with a lateral offset design, where different portions of the ring are at varying elevations and laterally offset from each other, reducing stress concentration and distributing it more uniformly across the semiconductor device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a protective ring extends vertically in a single vertical axis, then it provides structural protection, but it concentrates stress in a single direction causing corner film delamination and peeling

Engineering Contradiction:
Improveprotective ring structural protectionVSAvoidstress concentration causing film delamination and peeling
Core Design Contradiction:
StrengthVSObject-affected harmful factors

Solution Approach 1:

The protective ring is designed with portions at different elevations rather than extending vertically in a single axis. This dimensional change distributes stress across multiple vertical levels, preventing stress concentration that causes film delamination and peeling while maintaining structural protection.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The protective ring is segmented into multiple portions at different elevations. This segmentation allows stress to be distributed across separate segments rather than concentrated in a single continuous vertical structure, thereby reducing harmful stress effects on corner films.

Inventive Principle:
Principle #1Segmentation

2Reliability

If protective rings are used to protect semiconductor devices, then device protection is improved, but stress-induced damage and defects occur due to stress concentration

Engineering Contradiction:
Improvedevice protectionVSAvoidstress-induced damage and defects
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

By positioning protective ring portions at different elevations rather than in a single vertical plane, the design changes the dimensional distribution of stress. This multi-elevation configuration transforms concentrated stress into distributed stress across multiple levels, reducing stress-induced damage while maintaining protective function.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

Different portions of the protective ring are positioned at different elevations to create localized stress distribution. This local quality variation ensures that stress is not uniformly concentrated but rather distributed across specific regions at different vertical levels, preventing widespread stress-induced defects.

Inventive Principle:
Principle #3Local quality

3Strength

If a protective ring structure is implemented, then structural support is provided, but corner film delamination occurs due to stress concentration in a single vertical axis

Engineering Contradiction:
Improvestructural supportVSAvoidcorner film integrity
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The protective ring structure transitions from a single vertical axis configuration to a multi-elevation configuration. This dimensional change maintains structural support functionality while preventing corner film delamination by distributing stress across multiple vertical levels rather than concentrating it in one axis.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The protective ring is divided into multiple segments at different elevations. This segmentation preserves the overall structural support function while eliminating the continuous vertical stress path that causes corner film delamination, thereby improving manufacturing precision and film integrity.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20240404965A1Semiconductor device and method of making
Publication Date: 2024.12.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240404965A1 patent drawing
  • US20240404965A1 patent drawing
  • US20240404965A1 patent drawing

AI summary

A semiconductor device is provided. The semiconductor device includes one or more conductive structures and a protective ring. The protective ring includes a first portion and a second portion at a higher elevation than the first portion. The one or more conductive structures are laterally surrounded by the first portion of the protective ring. The one or more conductive structures are laterally surrounded by the second portion of the protective ring. In one or more first regions of the protective ring, the first portion of the protective ring is not vertically coincident with the second portion of the protective ring.