Protective Thin-Film Sequencing for Plasma Substrate Patterning
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Solution Overview
Problem
The existing substrate processing methods for patterning structures on substrates often result in damage to the lower patterned structures due to radical active species, leading to inconsistent spacing between patterns, which affects the quality of subsequent patterning processes.
Innovation Solution
A substrate processing method involving multiple cycles of thin film formation, where a first reactant is supplied and purged, followed by changing the chemical composition of the thin film using a reactive third reactant, and forming a third thin film with the same components, while controlling the thickness to prevent damage, using silicon-containing source gases and inert reactants to densify and protect the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a thin film is deposited using plasma on a patterned structure, then the thin film can be formed, but the patterned structure is damaged by radical active species
Solution Approach 1:
The patent introduces an intermediary protective layer (first thin film) between the plasma environment and the patterned structure. This protective layer absorbs the harmful radical active species, preventing them from damaging the underlying patterned structure while still allowing the thin film deposition process to proceed effectively.
Solution Approach 2:
The patent applies preliminary action by forming the first thin film protective layer before depositing the second thin film. This pre-formed protective layer is specifically designed to withstand plasma exposure and prevent damage to the patterned structure during subsequent plasma-based deposition processes.
2Productivity
If the patterned structure is damaged, then the deposition process can proceed, but the spacing between patterns becomes non-uniform
Solution Approach 1:
The protective first thin film acts as an intermediary that maintains the integrity of the patterned structure during deposition. By preventing damage to the patterned structure, it ensures that the spacing between patterns remains uniform throughout the deposition process, while still allowing continuous production.
3Reliability
If a reactive third reactant is supplied to change the chemical composition of the first thin film, then the protective function is enhanced, but the structure may be damaged by the reactive species
Solution Approach 1:
The patent applies local quality by making the first thin film selectively reactive. The film is designed to be reactive with the third reactant in regions where enhancement of protective function is needed, while maintaining resistance to damage in other regions. This selective reactivity allows the film to enhance protection without compromising the underlying structure.
Solution Approach 2:
The patent utilizes parameter changes by controlling the chemical composition and thickness of the first thin film. By adjusting these parameters, the film's reactivity with the third reactant is optimized to enhance protective function while preventing excessive reactions that could damage the underlying patterned structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the uniformity of critical dimensions in patterning by minimizing damage to the lower patterned structures, ensuring consistent spacing and enhancing the yield and quality of the final product.
Implementation Method 1
plasma may be applied during at least a portion of the first cycle, and the first reactant may be dissociated by the plasma to adsorb the first thin film on the structure
Implementation Method 2
the third reactant includes oxygen, and during the inducing of the reaction, the first thin film may be oxidized
Data Source
AI summary
A substrate processing method of preventing damage to a lower patterned structure includes: forming a first thin film having a certain thickness by performing a first cycle a plurality of times, the first cycle including supplying a first reactant on a structure and purging a residue, and forming a second thin film by changing a chemical composition of the first thin film having the certain thickness.