Proton-Conducting Oxide for Fast IR Refractive Index Tuning
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Solution Overview
Problem
Current infrared (IR) optical devices cannot achieve high-speed, continuous, and large refractive index modulation at low power requirements, with existing methods offering limited tuning speeds and high power consumption or optical losses.
Innovation Solution
An electric field-controlled refractive index tunable device using a phase change correlated transition metal oxide layer doped with E-field responsive charge carriers, such as hydrogen atoms, which accumulate or deplete in response to an electric field, enabling continuous refractive index modulation over a large range with low optical loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional semiconductor charge injection is used to modulate refractive index, then large Δn can be achieved, but the modulation speed is limited to below 10^-3 and power consumption is high
Solution Approach 1:
The patent changes the fundamental parameter of charge carrier type from conventional electrons/holes in semiconductors to mobile hydrogen ions (protons) in a proton-conducting oxide material. This parameter change enables both large refractive index modulation (Δn > 10^-3) and fast modulation speed (>1 MHz) because proton mobility in the solid-state proton-conducting oxide allows rapid charge accumulation and depletion without the limitations of conventional semiconductor charge injection.
2Measurement precision
If liquid crystals are used to achieve sizable refractive index change, then Δn ~1 can be obtained, but the tuning speed is slow (~10 msec) and optical losses are high for infrared wavelengths
Solution Approach 1:
The patent replaces the liquid crystal system with a solid-state proton-conducting oxide system. This substitution eliminates the high optical losses associated with liquid crystals in the infrared range while maintaining large refractive index modulation capability. The solid-state nature of the proton-conducting oxide also enables faster response times compared to the viscous liquid crystal materials.
3Measurement precision
If prior art carrier doping methods for SNO are used, then refractive index modulation can be achieved, but the reconfiguration time is too slow (tens of minutes) and the methods are incompatible with reconfigurable optical elements
Solution Approach 1:
The patent introduces a solid-state proton-conducting oxide material as an intermediary between the electrodes and the optical waveguide. This intermediary material enables rapid proton transport under applied electric field, achieving refractive index modulation in microseconds rather than minutes. The proton-conducting oxide acts as a mediator that facilitates fast, reversible charge accumulation and depletion, making the system compatible with reconfigurable optical elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for high-speed refractive index modulation at rates exceeding 1 MHz, with reconfiguration times shorter than 1 microsecond, and low direct current power dissipation, suitable for reconfigurable IR imaging systems and optical devices like lenses and mirrors.
Implementation Method 1
E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer
Data Source
AI summary
An electric field-controlled refractive index tunable device includes a phase change correlated transition metal oxide layer, and E-field responsive charge dopants. The E-field responsive charge dopants either accumulate in the phase change correlated transition metal oxide layer or are depleted from the phase change correlated transition metal oxide layer in response to an E-field applied to the phase change correlated transition metal oxide layer.