Proton Implantation Temperature Control for Semiconductor Doping
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Solution Overview
Problem
Current semiconductor device manufacturing processes require high beam currents and long implantation times to achieve high doping concentrations, leading to increased costs and manufacturing times due to the need for expensive equipment and prolonged processing.
Innovation Solution
A method involving the controlled temperature of a semiconductor substrate during proton implantation, maintaining it above 80°C for more than 70% of the implant process time, to enhance doping efficiency and reduce process time, while adjusting the beam current based on measured temperature to optimize the implantation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high beam currents are used during proton implantation to achieve high doping concentrations, then the doping concentration increases, but the manufacturing costs increase due to expensive equipment requirements
Solution Approach 1:
The patent changes the temperature parameter during proton implantation from conventional low temperatures to elevated temperatures (above 80°C for more than 70% of implant process time). This parameter change enables achieving high doping concentrations without requiring high beam currents, thereby avoiding the need for expensive high-current equipment and reducing manufacturing costs.
2Quantity of substance
If long implant process times are used to achieve high doping concentrations, then the doping concentration increases, but the manufacturing time increases
Solution Approach 1:
By changing the temperature parameter to above 80°C during implantation, the patent accelerates the doping process. This allows achieving high doping concentrations with shorter implant process times, thereby reducing manufacturing time while maintaining high doping levels.
3Productivity
If the beam current is increased to reduce implant process time, then the manufacturing time decreases, but the equipment cost increases due to expensive high-current equipment
Solution Approach 1:
The patent uses temperature as an alternative parameter to control implantation efficiency. By maintaining temperatures above 80°C for more than 70% of the implant process time, the method achieves high productivity without relying on high beam currents, thus avoiding the need for expensive high-current equipment.
4Device complexity
If conventional implantation processes are used without temperature control, then the process is simpler, but the doping concentration and efficiency are limited
Solution Approach 1:
The patent introduces temperature control as an additional process parameter, maintaining temperatures above 80°C for more than 70% of implant process time. This controlled parameter enables achieving high doping concentrations that are not attainable with conventional uncontrolled processes, accepting increased complexity as a trade-off for significantly improved doping performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the maximally reachable doping concentration, reduces manufacturing costs, and improves the efficiency of proton implantation, allowing for higher peak concentrations and more precise doping profiles within semiconductor devices.
Implementation Method 1
implanting a predefined dose of protons into a semiconductor substrate
Implementation Method 2
controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is higher than 80° C. for more than 70% of an implant process time
Data Source
AI summary
A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. Further, the lower target temperature limit is equal to a target temperature minus 30° C. and the upper target temperature limit is equal to the target temperature plus 30° C. and the target temperature is higher than 80° C.