Protruding Via Connection Structures for Semiconductor Devices
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Solution Overview
Problem
Current semiconductor technologies face challenges in creating high-integrated, high-speed devices with efficient via connection structures, particularly in the formation of protruding through-silicon vias (TSVs) that require advanced interconnection and redistribution structures for improved electrical connectivity and stability.
Innovation Solution
The development of a via connection structure using a protruding TSV structure formed through a damascene process, which includes a via core, barrier layers, and a liner, integrated with an interconnection structure within a groove, enhancing electrical connectivity and stability by increasing contact area and preventing physical separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional via connection structures are used, then manufacturing process is simpler, but electrical connectivity and sheet resistance performance are insufficient
Solution Approach 1:
The via connection structure is segmented into multiple functional layers: a protruding via structure extending from the first substrate, a second substrate positioned on the protruding via structure, and an interconnection structure filling the groove formed by the protruding via structure. This segmentation allows each component to be optimized independently for electrical performance while maintaining manufacturability.
Solution Approach 2:
The via structure is designed to protrude from the first substrate in the vertical dimension, creating a three-dimensional configuration rather than a traditional planar via. This dimensional change increases the contact area between substrates and improves electrical connectivity without significantly complicating the manufacturing process.
2Reliability
If contact area is increased to reduce sheet resistance, then electrical connectivity improves, but manufacturing precision requirements increase
Solution Approach 1:
The protruding via structure is formed in advance on the first substrate before bonding to the second substrate. This preliminary action ensures proper alignment and positioning, allowing the via structure to extend beyond the substrate edge and create an overlapping contact area that reduces sheet resistance without requiring high-precision alignment during the bonding process.
Data Source
AI summary
A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.