Protrusion Terminal Structure to Prevent Semiconductor Chip Short-Circuits
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor chips are thinned for high power applications, die bonding materials can climb to the upper surface, causing terminal short-circuits and increasing heat resistance. Additionally, the increase in wire length due to substrate thickening or chip thinning degrades high-frequency characteristics by increasing inductance components.
Innovation Solution
The semiconductor apparatus includes a semiconductor chip with a protrusion terminal and an insulating short-circuit prevention sidewall. The protrusion terminal has a larger cross-sectional area than the bonding wire, and the short-circuit prevention sidewall covers the side surfaces of the protrusion terminal to prevent die bonding material from reaching the metal base, thereby avoiding short-circuits. This configuration also reduces heat resistance and prevents inductance component increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the semiconductor chip is thinned to reduce heat resistance for high power applications, then heat dissipation performance is improved, but die bonding material can climb to the upper surface causing terminal short-circuits
Solution Approach 1:
An insulating coating layer is introduced as an intermediary between the protrusion terminal and the climbing die bonding material. This coating layer prevents direct contact between the conductive bonding material and the terminal, eliminating the short-circuit risk while allowing the chip to remain thin for heat dissipation
Solution Approach 2:
The solution moves from a two-dimensional planar structure to a three-dimensional structure by forming a protrusion terminal that extends upward from the chip surface. This vertical dimension allows the terminal to be electrically connected while physically separated from the climbing bonding material by the insulating coating
2Temperature
If the substrate is thickened or chip is thinned, then heat dissipation is improved, but wire length increases causing inductance component increase and degradation of high-frequency characteristics
Solution Approach 1:
The terminal structure transitions from a planar connection to a vertical protrusion, reducing the horizontal wire length required for electrical connection. This dimensional change minimizes inductance while allowing substrate thickening for improved heat dissipation
Solution Approach 2:
The long wire connection is replaced by a direct protrusion terminal structure that provides electrical connection through vertical conduction rather than horizontal wire routing, thereby reducing inductance and improving high-frequency performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents terminal short-circuits and reduces heat resistance, while also suppressing the degradation of high-frequency characteristics by minimizing inductance component increases due to wire length extensions.
Implementation Method 1
an insulating short-circuit prevention sidewall provided at a peripheral part of the first principal surface to cover a side surface of the protrusion terminal, the side surface facing circumference of the semiconductor substrate
Implementation Method 2
the first back surface being joined to the upper surface by a conductive joint material
Implementation Method 3
a mechanism for releasing heat generated at the transistor is needed for the module. The heat-releasing mechanism typically has a structure with which heat is released from the back surface of a semiconductor chip on which the transistor is formed to a package back surface
Implementation Method 4
a bonding wire connecting an end part of the protrusion terminal in a protrusion direction and the conductor pattern
Data Source
AI summary
A semiconductor device (100) according to the present disclosure comprises a semiconductor chip (130) in which are formed a protruding terminal (14) that electrically connects to a transistor (13) and that has a greater cross-sectional area than a bonding wire (4) and a short circuit prevention side wall (15) that is insulating and that covers side surfaces that face the surroundings of the protruding terminal (14). The semiconductor chip (130) is bonded to the upper surface (3) of a metal plate (2) by a conductive bonding material 6. A conductor pattern (34a) that is formed in a circuit board (30) bonded to the upper surface (3) of the metal plate (2) is connected via the bonding wire (4) to the projection-direction end of the protruding terminal (14).