Pseudo Catalyst Film Formation Control in Semiconductor Substrate Processing
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Solution Overview
Problem
In semiconductor device manufacturing, using a single species of organic-based source in film formation processing limits the ability to change film formation rate, temperature, and properties, making it difficult to achieve desired film characteristics.
Innovation Solution
Incorporating a pseudo catalyst, such as a halogen compound or boron compound, into the process chamber with the organic-based source to control film formation, allowing for adjustments in film formation rate, temperature, and properties without changing the source.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single species of organic-based source is used in film formation processing, then the process is simple and cost-effective, but the ability to change film formation rate, temperature, and properties is limited
Solution Approach 1:
A pseudo-catalyst (halogen compound or boron compound) is introduced as an intermediary substance that mediates between the organic-based source and the substrate. This pseudo-catalyst enables control over film formation rate, temperature, and properties without requiring changes to the organic-based source itself, thus maintaining process simplicity while achieving versatility.
Solution Approach 2:
The invention changes the chemical composition parameter by introducing a pseudo-catalyst (halogen compound or boron compound) into the system. This parameter change allows control over film formation characteristics (formation rate, temperature, properties) without changing the organic-based source, resolving the contradiction between simplicity and adaptability.
2Manufacturing precision
If multiple sources are used to control film properties, then film characteristics can be optimized, but the manufacturing process becomes more complex and costly
Solution Approach 1:
The pseudo-catalyst serves as an intermediary that enables precise control of film properties (composition, formation rate, temperature) without requiring multiple organic-based sources. This maintains ease of manufacture by keeping the source system simple while achieving the film property control that would otherwise require multiple sources.
Solution Approach 2:
The pseudo-catalyst (halogen compound or boron compound) is used in small amounts and can be easily replenished, serving as a cost-effective means to control film properties without the need for expensive multiple organic-based sources. This resolves the contradiction between manufacturing precision and ease of manufacture.
3Productivity
If plasma is used for film formation, then film formation rate increases, but plasma damage to the substrate occurs
Solution Approach 1:
The pseudo-catalyst acts as an intermediary that enables high film formation rates without requiring plasma. The halogen compound or boron compound facilitates the decomposition and reaction of the organic-based source, achieving high productivity while avoiding the harmful plasma effects on the substrate.
Solution Approach 2:
The invention substitutes the plasma mechanism (electromagnetic field-based) with a chemical catalysis mechanism. By using the pseudo-catalyst to promote chemical reactions, the system achieves high film formation rates without the mechanical/electromagnetic stress and damage associated with plasma processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables flexible control over film formation rate, temperature, and properties, even with a single species of organic-based source, improving film quality and reducing manufacturing costs by preventing plasma damage and optimizing substrate processing.
Implementation Method 1
supplying an organic-based source containing a prescribed element, and a pseudo catalyst including at least one selected from the group consisting of a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber
Implementation Method 2
maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber
Data Source
AI summary
A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.