Pseudo-cryogenic Semiconductor Voltage Adjustment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Cryogenic semiconductor devices face issues with increased threshold voltage and power consumption due to excessive voltage swing and operation speed reduction when operating in cryogenic temperatures, necessitating a pseudo-cryogenic semiconductor device capable of stable operation in a pseudo-cryogenic temperature range.
Innovation Solution
A pseudo-cryogenic semiconductor device incorporating a voltage supplier with temperature sensing and voltage adjustment capabilities, including a bulk bias voltage supply circuit and word line bias voltage supply circuit, which generate and adjust voltages based on temperature to maintain optimal performance within the pseudo-cryogenic temperature range of 70° K to 173° K.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a cryogenic semiconductor device operates in a cryogenic temperature range, then high speed operation and low power consumption are achieved, but threshold voltage increases and operation speed slows due to excessive voltage swing
Solution Approach 1:
The patent implements dynamic voltage adjustment by introducing a voltage generator that dynamically modifies the voltage swing amplitude based on detected temperature conditions. The voltage swing is adjusted from a first amplitude at a first temperature to a second amplitude at a second temperature, enabling the circuit to adapt its operating characteristics in real-time rather than being fixed for the entire cryogenic range.
Solution Approach 2:
The patent changes the voltage swing parameter adaptively based on temperature. A temperature detector monitors the temperature condition, and based on this detection, the voltage generator modifies the voltage swing amplitude to an appropriate level, thereby optimizing both power consumption and operation speed for different temperature points within the cryogenic range.
2Speed
If voltage swing is increased to maintain operation speed, then high-speed operation is achieved, but power consumption increases
Solution Approach 1:
The voltage swing amplitude is made dynamic rather than fixed. The voltage generator responds to temperature detector signals by adjusting the voltage swing amplitude appropriately, allowing the system to achieve high-speed operation when necessary while reducing power consumption when lower performance is acceptable, creating a dynamic optimization rather than a static compromise.
Solution Approach 2:
The voltage swing parameter is changed adaptively based on temperature conditions. When the temperature detector identifies a specific temperature range, the voltage generator modifies the voltage swing amplitude to optimize the balance between speed and power consumption, rather than maintaining a constant voltage swing that would either waste power or insufficiently drive the circuit.
3Reliability
If a temperature sensor and voltage adjustment circuit are added to a cryogenic semiconductor device, then stable operation in pseudo-cryogenic temperature range is achieved, but device complexity increases
Solution Approach 1:
The system performs self-diagnosis and self-adjustment through the temperature detector and voltage generator combination. The temperature detector automatically monitors temperature conditions and triggers appropriate voltage swing adjustments without external intervention, enabling the device to self-optimize its performance for stable operation across varying temperature conditions.
Solution Approach 2:
A feedback loop is established where the temperature detector continuously monitors temperature and provides information to the voltage generator, which adjusts the voltage swing amplitude accordingly. This closed-loop control system automatically compensates for temperature variations, ensuring stable operation while keeping the complexity manageable through integrated feedback control.
Data Source
AI summary
A pseudo-cryogenic semiconductor device includes memory cells having a plurality of transistors; and a bulk bias voltage supply circuit configured to provide a bulk bias voltage to be applied to a bulk region of the memory cells. The bulk bias voltage supply circuit includes a first temperature sensing circuit configured to generate a first voltage adjustment signal by sensing a temperature in a range from about 70° K to about 173° K; and a bulk bias voltage selector configured to receive the first voltage adjustment signal, select one of a first bulk bias voltage and a second bulk bias voltage different from the first bulk bias voltage, and output the selected voltage as the bulk bias voltage.