Pressed Self-Perfection by Liquefaction for Nanoscale Feature Adjustment

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional techniques face challenges in accurately producing microscale features with minimum dimensions below 10 nanometers and struggle with defects like line edge roughness and sloped side walls, limiting the reduction of spacing between microstructures and hole diameters in microscale device fabrication.

Innovation Solution

The process of Pressed Self-Perfection by Liquefaction (P-SPEL) involves providing a microscale device with a soft surface, placing a guiding plate adjacent to it, and applying pressure to reduce lateral dimensions and repair defects by allowing the material to flow into the desired geometry before solidification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional lithography techniques are used to fabricate microscale features, then the fabrication process is simple and widely applicable, but the minimum lateral dimension cannot be accurately produced below 10 nanometers and defects like line edge roughness and sloped side walls occur

Engineering Contradiction:
Improveminimum lateral dimension accuracyVSAvoidfabrication process complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by first forming microscale patterns using conventional lithography techniques to create an initial structure, then subsequently softening and pressing the structure to achieve the desired nanoscale precision. This two-step approach allows the use of simple, widely applicable lithography methods while still achieving accurate sub-10 nanometer dimensions through the follow-up softening and pressing operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs parameter changes by transforming the physical state of the microscale structure from rigid to soft through heating or chemical treatment, enabling the material to flow and conform to the desired nanoscale geometry. This parameter change allows the structure to be reshaped under pressure to achieve precise lateral dimensions below 10 nanometers while maintaining ease of manufacture through conventional lithography.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If conventional lithography techniques are used, then the fabrication process is straightforward, but line edge roughness and sloped side walls defects are produced

Engineering Contradiction:
Improveline edge smoothnessVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses preliminary action by first creating the microscale pattern with conventional lithography, then applying softening and pressing operations to smooth the line edges and correct sloped side walls. This preliminary formation followed by refinement allows the use of straightforward lithography processes while eliminating defects through subsequent processing steps.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies self-service by allowing the softened material to self-flow and self-level under pressure, automatically smoothing line edge roughness and correcting sloped side walls without requiring complex external intervention. The material's own viscosity and flow properties enable it to self-correct defects during the pressing operation.

Inventive Principle:
Principle #25Self-service

3Length of moving object

If conventional techniques are used, then the fabrication method is simple, but the spacing between microstructures and hole diameters cannot be reduced to nanoscale dimensions

Engineering Contradiction:
Improvespacing between microstructuresVSAvoidfabrication simplicity
Core Design Contradiction:
Length of moving objectVSEase of manufacture

Solution Approach 1:

The patent employs parameter changes by softening the microscale structure to enable material flow, allowing the spacing between microstructures and hole diameters to be reduced to nanoscale dimensions. The change in material state from rigid to soft enables dimensional adjustment while maintaining relative fabrication simplicity through the use of conventional lithography for the initial pattern formation.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies preliminary action by first forming the microscale pattern with conventional lithography to establish the initial structure, then subsequently softening and pressing to reduce spacing to nanoscale dimensions. This sequential approach maintains fabrication simplicity by using well-established lithography techniques for the preliminary step while achieving nanoscale precision in the final structure.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

P-SPEL effectively reduces the spacing between microstructures and hole diameters to nanoscale dimensions, smooths line edge roughness, and perfects shapes, overcoming limitations of conventional lithography techniques by achieving precise adjustments and defect repair.

Implementation Method 1

Pressing the guiding plate onto the exposed surface causes the soft material to flow laterally between the guiding plate and the substrate, reducing the lateral dimension

Methodology Applied
Scientific EffectPressure induced flow: Deformation

Implementation Method 2

providing the device with a soft or softened exposed surface

Methodology Applied
Scientific EffectSoftening: Melting

Data Source

PatentUS8163657B2Process for adjusting the size and shape of nanostructures
Publication Date: 2012.04.24 CHOU(US)
  • US8163657B2 patent drawing
  • US8163657B2 patent drawing
  • US8163657B2 patent drawing

AI summary

In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.