Pt Resistance Layer Structure for Wide-Temperature Electron Multipliers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional atomic layer deposition (ALD) micro-channel plates (MCPs) using resistance films formed by ALD methods exhibit poor temperature characteristics, limiting their operational range from low to high temperatures, and are affected by environmental temperature variations, which is a concern for applications like photo-multiplier tubes and image intensifiers.
Innovation Solution
An electron multiplier structure is developed using a substrate with a secondary electron emitting layer and a resistance layer that includes a Pt layer with two-dimensionally arranged metal particles, which have positive temperature characteristics, to stabilize and improve the resistance value variation across a wider temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a resistance film is formed by the ALD method in conventional MCPs, then the film formation precision is improved, but the temperature characteristic (temperature coefficient) of the resistance value deteriorates
Solution Approach 1:
The patent applies composite materials by combining multiple layers with different functional properties: a first resistance layer (e.g., tungsten or molybdenum) providing base resistance, a second resistance layer (e.g., platinum) with positive temperature coefficient to compensate for drift, and insulating layers (e.g., aluminum oxide) to electrically isolate the conductive layers. This multi-layer composite structure achieves both precise film formation through ALD and stable temperature characteristics across wide temperature ranges.
2Device complexity
If conventional ALD-MCP structures are used, then the manufacturing process is simplified, but the operational temperature range is limited
Solution Approach 1:
The patent employs parameter changes by systematically varying the thickness, material composition, and layer configuration of the resistance films to optimize performance across different temperature ranges. The ALD process parameters (temperature, pressure, precursor flow rates) are precisely controlled to achieve the desired film properties. This enables the MCP to operate stably from cryogenic temperatures up to high temperatures while maintaining a manufacturable process.
3Device complexity
If a single-layer resistance film is used, then the device structure is simplified, but the resistance value stability across temperature variations deteriorates
Solution Approach 1:
The patent applies composite materials by combining multiple layers with different functional properties: a first resistance layer (e.g., tungsten or molybdenum) providing base resistance, a second resistance layer (e.g., platinum) with positive temperature coefficient to compensate for drift, and insulating layers (e.g., aluminum oxide) to electrically isolate the conductive layers. This multi-layer composite structure achieves both precise film formation through ALD and stable temperature characteristics across wide temperature ranges.
Solution Approach 2:
The patent applies local quality by assigning different functional properties to different layers: the first resistance layer provides bulk resistance, the second resistance layer with positive temperature coefficient provides temperature compensation at specific locations, and insulating layers provide electrical isolation where needed. This localized functional differentiation enables resistance value stability across temperature variations while maintaining a relatively simple overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration effectively enhances the temperature coefficient of the resistance layer, reducing current variations due to environmental temperature changes, allowing the electron multiplier to function stably across a broader temperature range, thus addressing the limitations of conventional ALD-MCPs.
Implementation Method 1
a resistance layer including a Pt layer having a plurality of metal particles comprised of a metal material whose resistance value has a positive temperature characteristic two-dimensionally arranged in a state of being separated from each other
Implementation Method 2
an electron multiplier that emits secondary electrons in response to incidence of the charged particles
Data Source
Figure 1A~1B
Figure 2A~2C
Figure 3A~3C
AI summary
The present embodiment relates to an electron multiplier having a structure configured to suppress and stabilize a variation of a resistance value in a wider temperature range. The electron multiplier includes a resistance layer sandwiched between a substrate and a secondary electron emitting layer and configured using a Pt layer two-dimensionally formed on a layer formation surface which is coincident with or substantially parallel to a channel formation surface of the substrate. The resistance layer has a temperature characteristic within a range in which a resistance value at -60°C is 10 times or less, and a resistance value at +60°C is 0.25 times or more, relative to a resistance value at a temperature of 20°C.