On-State Malfunction Detection for PTC Elements

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Solution Overview

Problem

Current methods for detecting on-state malfunctions in switching elements, particularly those controlling PTC elements with varying electrical resistance, face challenges due to temperature-dependent resistance variations, which obscure current detection and limit the effectiveness of conventional sensors like shunt resistors, and cannot distinguish between normal and malfunctioning currents.

Innovation Solution

An on-state malfunction detection device that monitors the voltage between the ends of the element after a turn-off instruction is given, utilizing a detection unit with voltage dividers and a photocoupler to determine if the voltage exceeds a threshold, allowing for accurate detection of current flow regardless of temperature-induced resistance changes, and includes a second switching element to cut off power in case of a malfunction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a current sensor (shunt resistor, current transformer) is used to detect current in the PTC heater, then current detection is enabled, but at high temperatures the current flowing drops and is obscured by sensor error and offset, making detection impossible

Engineering Contradiction:
Improvecurrent detection accuracyVSAvoiddetection reliability at high temperature
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The invention changes the detection parameter from current to voltage. By detecting the voltage between both ends of the PTC element instead of the current flowing through it, the system avoids the problem of current dropping at high temperatures being obscured by sensor errors. The voltage parameter remains detectable and reliable across the full temperature range.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the electrical resistance value of the shunt resistor is increased to enable detection, then detection capability is improved, but heat generation increases, limiting the maximum resistance value

Engineering Contradiction:
Improvedetection capabilityVSAvoidheat generation
Core Design Contradiction:
Measurement precisionVSLoss of energy

Solution Approach 1:

The invention transitions from current-based detection using a shunt resistor to voltage-based detection across the PTC element terminals. This eliminates the need for a high-resistance shunt resistor that would generate excessive heat, while still enabling reliable detection of the element's state through voltage measurement.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If a fuse is used for protection, then overcurrent protection is provided, but during on-state malfunction the current equals normal current and cannot be separated, so protection cannot be achieved

Engineering Contradiction:
Improveprotection capabilityVSAvoidmalfunction detection accuracy
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The invention implements feedback-based malfunction detection by continuously monitoring the voltage between the PTC element terminals. When a turn-off instruction is issued and power supply is enabled, the detection unit checks whether voltage remains above a threshold, indicating the element is still conducting and a malfunction exists. This feedback mechanism enables precise detection of on-state malfunctions that cannot be distinguished by current alone.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system performs preliminary detection by issuing a turn-off instruction and then checking the voltage state before allowing normal operation to continue. This preliminary action enables the system to detect malfunctions that would be indistinguishable during normal current flow, providing protection before damage occurs.

Inventive Principle:
Principle #10Preliminary action

4Reliability

If voltage between both ends of the element is used for detection, then malfunction detection is enabled regardless of temperature, but additional detection circuitry is required

Engineering Contradiction:
Improvedetection reliability across temperature rangeVSAvoiddetection circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The voltage detection circuit serves multiple functions: it detects both normal operation status and on-state malfunctions, and can operate across the full temperature range of the PTC element. This multi-functionality reduces the need for separate detection systems for different operating conditions, balancing reliability improvement with acceptable circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables reliable detection of on-state malfunctions in switching elements with temperature-dependent resistance, improving safety by distinguishing between normal and malfunctioning states and allowing for timely power cutoff, while simplifying the detection process and reducing the risk of damage.

Implementation Method 1

utilizing a detection unit with voltage dividers and a photocoupler to determine if the voltage exceeds a threshold

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Data Source

PatentUS10286753B2On-state malfunction detection device and method therefor
Publication Date: 2019.05.14 MITSUBISHI HEAVY IND THERMAL SYST
  • US10286753B2 patent drawing
  • US10286753B2 patent drawing
  • US10286753B2 patent drawing

AI summary

The on-state malfunction detection device detects an on-state malfunction, for instance, in an IGBT that is provided to correspond to a PTC element whose electrical resistance value varies according to temperature and that controls the electrification of the PTC element. In a state in which a turn-off instruction has been outputted from a control device to the IGBT, the on-state malfunction detection device determines through calculation an electric potential difference following voltage division of the voltage between the both ends of the PTC element, and detects an on-state malfunction of the IGBT when this electric potential difference is equal to or greater than a predetermined threshold value. This allows for the detection of an on-state malfunction in a switching element that performs an electrical conduction control for an element whose electrical resistance value varies according to temperature.