Power Semiconductor Diode With PTC Resistor for Thermal Uniformity
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Solution Overview
Problem
Power semiconductor devices face challenges in maintaining homogeneous temperature distribution, leading to reduced switching ruggedness, power cycling stability, and short circuit ruggedness due to inhomogeneous temperature dependence, which is exacerbated by solder voids and self-heating, particularly in SiC-based MOSFETs.
Innovation Solution
Incorporating a resistive element with a positive-temperature-coefficient resistance in the load current path external to the semiconductor body to manage temperature distribution, ensuring a more uniform heat dissipation and reducing the risk of local overheating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a power semiconductor device operates with high current density, then the device can deliver high power output, but inhomogeneous temperature distribution occurs leading to reduced switching ruggedness and power cycling stability
Solution Approach 1:
The patent introduces a compensating structure (such as a compensating layer or modified electrode configuration) that creates localized thermal management zones within the device. This compensating structure has different thermal or electrical properties than the main active region, allowing it to counterbalance the self-heating effects in high-current density areas and promote more uniform temperature distribution across the device.
2Ease of manufacture
If the device structure is simplified to reduce manufacturing complexity, then production cost decreases, but temperature management capability is reduced leading to worsened switching ruggedness
Solution Approach 1:
The patent integrates the compensating function directly into existing device structures such as the electrode or substrate configuration, rather than adding separate discrete thermal management components. This merging approach allows the device to achieve improved temperature distribution and switching ruggedness while maintaining relatively simple manufacturing processes, as the compensating structure is formed using standard semiconductor fabrication techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances temperature homogeneity within the semiconductor device, improving switching ruggedness, power cycling stability, and reducing bipolar degradation, thereby increasing the device's reliability and performance under high ambient temperatures.
Implementation Method 1
At least one resistive element is arranged external of the semiconductor body within the second load current path, wherein the at least one resistive element exhibits a resistance having a non-linear positive-temperature-coefficient
Data Source
AI summary
A power semiconductor diode includes: a semiconductor body with a drift region of a first conductivity type; a first load terminal at a first side of the semiconductor body coupled to an anode region of a second conductivity type in the semiconductor body and coupled to the drift region; a second load terminal at a second side of the semiconductor body coupled to both cathode regions of the first conductivity type and short regions of the second conductivity type of a doped region in the semiconductor body and coupled to the drift region; and a resistive element external of the semiconductor body. The diode conducts a load current between the load terminals, a first path of which crosses the anode region, drift region and cathode regions and a second path of which crosses the anode region, drift region and short regions. The resistive element exhibits a resistance having a positive-temperature-coefficient.