PTFE Copper Clad Laminate Sputtering for Uniform Metal Adhesion
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Solution Overview
Problem
Existing methods for manufacturing flexible copper clad laminated films with a polytetrafluoroethylene (PTFE) substrate face challenges in uniformly depositing a metal thin film, leading to increased permittivity and degraded electrical performance, while also degrading the properties of the PTFE substrate.
Innovation Solution
A method involving an atomic sputtering epitaxy (ASE) process is used to uniformly deposit a metal thin film on a PTFE substrate, controlling the deposition conditions, including temperature, pressure, and vacuum, and using a sputtering apparatus with a single crystal copper wire and vibration isolation to improve adhesion and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesive or polyimide is used to laminate copper thin film on PTFE substrate, then metal adhesion is improved, but permittivity increases and signal transmission speed decreases
Solution Approach 1:
The invention removes the adhesive layer and polyimide coating from the manufacturing process, directly depositing copper thin film onto the PTFE substrate through sputtering. This extraction of intermediate layers eliminates the permittivity increase caused by adhesives while maintaining metal adhesion through direct physical vapor deposition bonding.
Solution Approach 2:
The invention replaces the chemical bonding mechanism of adhesives with physical vapor deposition (sputtering) to achieve metal adhesion. The sputtering process deposits copper atoms directly onto the PTFE substrate, creating strong adhesion through physical bonding without requiring chemical adhesives that increase permittivity.
2Speed
If sputtering process is used to deposit metal thin film on PTFE substrate, then signal transmission speed is improved by avoiding adhesive, but metal adhesion and uniform deposition become difficult
Solution Approach 1:
The invention optimizes sputtering parameters including applying RF power in the 13.56 MHz frequency range, controlling chamber pressure between 0.1-10 mTorr, and maintaining substrate temperature between 150-250°C. These parameter changes enable uniform metal deposition and strong adhesion while preserving the low permittivity advantage of PTFE.
Solution Approach 2:
The invention employs RF (radio frequency) power application to the sputtering target, creating periodic electromagnetic field cycles that enhance metal atom ejection and deposition uniformity. The RF cycling ensures consistent plasma generation and metal film growth across the substrate surface.
3Manufacturing precision
If conventional sputtering is used without vibration isolation, then device complexity is reduced, but deposition uniformity and electrical performance deteriorate due to physical vibration
Solution Approach 1:
The invention introduces a vibration isolation table as an intermediary device between the sputtering chamber and the floor/ground. This mediator absorbs and dampens external vibrations, preventing them from affecting the metal deposition process and ensuring uniform film formation without requiring complex active vibration cancellation systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the adhesion between the PTFE substrate and metal thin film, improving electrical performance and mechanical properties, making it suitable for advanced applications in communications, semiconductors, displays, and secondary batteries.
Implementation Method 1
a sputtering process has been proposed in which a copper thin film is directly deposited on the polytetrafluoroethylene (PTFE) substrate 10
Implementation Method 2
The sputtering process is a type of vacuum deposition method mainly used in the production of integrated circuits, which involves a process of accelerating gas ions ionized at a relatively low vacuum degree to collide with a target and eject atoms to then form a thin film on a substrate
Implementation Method 3
a process of accelerating gas ions ionized at a relatively low vacuum degree
Data Source
Figure 1(a)~1(c)
Figure 2(a)~2(c)
Figure 3
AI summary
The present invention relates to a method of manufacturing a flexible copper clad laminated film having a polytetrafluoroethylene (PTFE) substrate. More specifically, the present invention relates to a method of manufacturing a flexible copper clad laminated (FCCL) film having a polytetrafluoroethylene (PTFE) substrate, in which a metal thin film is uniformly deposited on the polytetrafluoroethylene (PTFE) substrate to manufacture a flexible copper clad laminated (FCCL) film, which can improve the electrical performance of the flexible copper clad laminated film and avoid the property degradation of the polytetrafluoroethylene (PTFE) substrate.