Integrated PTI Sensor Protection for Power Semiconductor Packages

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Solution Overview

Problem

Existing power semiconductor devices lack effective and efficient temperature regulation mechanisms to prevent overheating beyond their safe operating limits, leading to potential failure, and existing sense circuits are complex and costly.

Innovation Solution

Integration of a positive temperature indicator (PTI) component in a temperature sensor thermally coupled to the semiconductor chip, which uses a polymer positive temperature coefficient (PPTC) material to detect and signal overheating, triggering a controller to reduce or cease power supply.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a passive heat sink is used to regulate temperature, then heat dissipation is achieved, but the temperature may still exceed the upper safe limit

Engineering Contradiction:
Improvetemperature regulationVSAvoidsafe operation guarantee
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent implements a feedback mechanism by integrating a temperature sensor that continuously monitors the semiconductor chip temperature and provides real-time feedback to a controller. When the temperature exceeds a predetermined threshold, the controller activates a cooling mechanism or reduces power to the semiconductor device, ensuring the temperature remains within safe operating limits. This closed-loop feedback system resolves the contradiction by actively maintaining temperature control rather than relying on passive heat dissipation alone.

Inventive Principle:
Principle #23Feedback

2Reliability

If complex sense circuits are used to protect semiconductor devices, then protection capability is improved, but circuit complexity and cost increase

Engineering Contradiction:
Improveprotection capabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the temperature sensing function directly into the semiconductor device package by integrating a temperature sensor in thermal contact with the semiconductor chip. This integrated approach combines the protection function with the existing device structure, eliminating the need for separate complex sense circuits. The merged design provides effective temperature monitoring and protection while reducing overall system complexity and cost.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If existing sense circuits are used for temperature monitoring, then protection is provided, but power losses increase

Engineering Contradiction:
Improveprotection functionVSAvoidpower loss
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent implements a self-service approach where the semiconductor device includes an integrated temperature sensor that autonomously monitors its own operating temperature. The sensor is thermally coupled to the semiconductor chip and provides direct temperature feedback without requiring additional power-intensive measurement circuits. This self-monitoring capability provides protection while minimizing additional power consumption compared to external sense circuits.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The PTI sensor effectively prevents overheating by generating a signal to limit power, ensuring the semiconductor chip operates within safe temperature limits, providing timely protection and reducing complexity and cost compared to existing solutions.

Implementation Method 1

a temperature sensor, disposed in thermal contact with the semiconductor chip

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

the temperature sensor includes a positive temperature indicator (PTI) component

Methodology Applied
Scientific EffectPositive temperature coefficient effect: Thermo-resistive Effect

Data Source

PatentUS12456856B2Overcurrent protection of power semiconductor packages using integrated positive temperature indicator
Publication Date: 2025.10.28 LITTELFUSE INC
  • US12456856B2 patent drawing
  • US12456856B2 patent drawing
  • US12456856B2 patent drawing

AI summary

A semiconductor device protection arrangement. The semiconductor device protection arrangement may include a semiconductor chip; a controller, coupled to the power semiconductor chip; and a temperature sensor, disposed in thermal contact with the semiconductor chip, where the temperature sensor includes a positive temperature indicator (PTI) component.