PtSe2 Type-II Dirac Semimetal Synthesis via Self-Flux

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Solution Overview

Problem

Current technologies have not realized the spin-degenerate counterpart of type-II Dirac semimetals, which exhibit unique physical properties such as anomalous negative magnetoresistance and finite density of states at the Fermi level, due to the lack of materials with strongly tilted cones in three-dimensional momentum space.

Innovation Solution

A self-flux method and chemical vapor transport method are employed to synthesize PtSe2, a type-II Dirac semimetal compound, involving specific temperature and pressure conditions to achieve the desired crystal structure and properties, confirming its classification as a type-II Dirac semimetal through experimental and theoretical validation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional synthesis methods are used to prepare semimetal compounds, then the material can be obtained, but the crystal structure and electronic properties required for type-II Dirac semimetal characteristics cannot be achieved

Engineering Contradiction:
Improvecrystal structure precisionVSAvoidsynthesis complexity
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent employs precise control of synthesis parameters including temperature gradients (800-1000°C), pressure conditions, and stoichiometric ratios to achieve the specific crystal structure of type-II Dirac semimetal. The self-flux method uses controlled cooling rates and temperature profiles to obtain the desired strongly tilted cone structure with correct electronic properties.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent utilizes a flux medium (such as PbCl2, ZnCl2, or other molten salts) as an intermediary to facilitate crystal growth. The flux acts as a solvent during synthesis, enabling controlled nucleation and growth of high-quality single crystals with the required type-II Dirac semimetal structure, then is removed through washing and purification steps.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If type-I Dirac semimetals are used, then spin-degenerate conical dispersions can be observed, but the strongly tilted cones and finite density of states at Fermi level characteristic of type-II cannot be realized

Engineering Contradiction:
Improveelectronic property accuracyVSAvoidtopological phase diversity
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent achieves type-II Dirac semimetal characteristics by creating asymmetric band structures with strongly tilted cones. This asymmetry in the electron energy band structure, where the cone tilts significantly relative to the momentum space, produces the distinctive finite density of states at the Fermi level and enables access to diverse topological phases not available in symmetric type-I structures.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent engineering specifically targets local electronic structure properties at the Fermi level to achieve type-II characteristics. By controlling the local crystal structure and electronic environment through precise synthesis conditions, the material exhibits finite density of states and strongly tilted cones in specific regions of momentum space, while maintaining overall structural stability.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If high temperature synthesis is employed to achieve desired crystal structure, then the type-II Dirac semimetal structure can be obtained, but energy consumption and equipment requirements increase

Engineering Contradiction:
Improvecrystal structure qualityVSAvoidsynthesis energy consumption
Core Design Contradiction:
Manufacturing precisionVSUse of energy by stationary object

Solution Approach 1:

The patent employs self-flux synthesis where the flux medium serves multiple functions: it acts as a solvent for reactants, provides a controlled environment for crystal growth, and facilitates heat distribution. The system is self-regulating through the melting and solidification cycles of the flux, reducing the need for external intervention and energy input while maintaining high crystal quality.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The synthesis process utilizes phase transitions of the flux medium (melting at elevated temperature, then solidifying during cooling) to drive crystal formation. The flux transitions from liquid to solid state during controlled cooling, providing a natural mechanism for crystal growth and structure development without requiring continuous high energy input, thus reducing overall energy consumption.

Inventive Principle:
Principle #36Phase transitions

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The synthesized PtSe2 exhibits anomalous negative magnetoresistance, quantum spin Hall effect, and linear quantum magnetoresistance, confirming its status as a type-II Dirac semimetal with strongly tilted cones, overcoming the limitations of existing technologies.

Implementation Method 1

A self-flux method and chemical vapor transport method are employed to synthesize PtSe2, involving specific temperature and pressure conditions to achieve the desired crystal structure and properties

Methodology Applied
Scientific EffectThermal energy: Heating

Implementation Method 2

A self-flux method and chemical vapor transport method are employed to synthesize PtSe2, involving specific temperature and pressure conditions to achieve the desired crystal structure and properties

Methodology Applied
Scientific EffectThermal gradient: Temperature Gradient

Data Source

PatentUS11111601B2Semimetal compound of Pt
Publication Date: 2021.09.07 HON HAI PRECISION INDUSTRY CO LTD
  • US11111601B2 patent drawing
  • US11111601B2 patent drawing
  • US11111601B2 patent drawing

AI summary

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe2. The method comprises: providing a PtSe2 polycrystalline material; placing the PtSe2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.