PtSe2 Type-II Dirac Semimetal Synthesis via Controlled Thermal Processing

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Solution Overview

Problem

Current technologies have not realized the spin-degenerate counterpart of type-II Dirac semimetals, which are essential for exploring exotic physical phenomena and properties.

Innovation Solution

A method for synthesizing the semimetal PtSe2 using self-flux and chemical vapor transport methods, involving specific temperature and pressure conditions to achieve a type-II Dirac semimetal compound with tilted cones and anomalous negative magnetoresistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional synthesis methods are used, then simple materials can be produced, but type-II Dirac semimetal properties cannot be achieved

Engineering Contradiction:
Improverealization of type-II Dirac semimetalVSAvoidsynthesis complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs precise control of temperature parameters (heating to specific temperatures, controlled cooling rates) and pressure conditions to transform the synthesis process and achieve type-II Dirac semimetal properties that cannot be obtained through conventional methods

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The synthesis process utilizes phase transitions of the precursor materials under controlled temperature and pressure conditions to form the desired PtSe2 type-II Dirac semimetal structure with the specific tilted cone topology

Inventive Principle:
Principle #36Phase transitions

2Adaptability or versatility

If spin-degenerate type-II Dirac semimetal is realized, then exotic physical phenomena can be studied, but synthesis difficulty increases

Engineering Contradiction:
Improveexploration of exotic physical phenomenaVSAvoidsynthesis process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent uses self-flux method as a preliminary action where excess Pt acts as a flux to facilitate the formation of PtSe2 crystals during the synthesis process, simplifying the overall complexity of obtaining the desired structure

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent employs chemical vapor transport agents as intermediaries to facilitate the transport and deposition of volatile species during crystal growth, enabling controlled formation of type-II Dirac semimetal structure

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The synthesis of PtSe2 results in a type-II Dirac semimetal exhibiting unique properties like negative magnetoresistance and quantum spin Hall effect, confirming the realization of spin-degenerate type-II Dirac semimetals.

Implementation Method 1

self-flux method

Methodology Applied
Scientific EffectMelting: Melting

Implementation Method 2

synthesizing the semimetal PtSe2

Methodology Applied
Scientific EffectCrystallization: Crystallisation

Implementation Method 3

chemical vapor transport methods

Methodology Applied
Scientific EffectChemical vapor transport: Chemical Transport Reactions

Implementation Method 4

deposit PtSe2 crystals

Methodology Applied
Scientific EffectDeposition: Deposition (physical)

Data Source

PatentUS11001937B2Method for making semimetal compound of Pt
Publication Date: 2021.05.11 HON HAI PRECISION INDUSTRY CO LTD
  • US11001937B2 patent drawing
  • US11001937B2 patent drawing
  • US11001937B2 patent drawing

AI summary

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour and keeping for 24 hours to 100 hours to obtain a crystal material of PtSe2; and separating the excessive reacting materials from the crystal material of PtSe2.