P-Type Oxide Semiconductor Deposition for Wide-Band-Gap Conductivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for producing p-type oxide semiconductors, particularly using gallium oxide, have been unsuccessful in achieving effective p-type conductivity, with materials like Rh2O3 and ZnRh2O4 facing issues such as low raw material concentration, difficulty in forming single crystals, and inadequate Hall coefficient measurements, making them unsuitable for high-performance applications like LEDs and power devices.
Innovation Solution
A method involving the generation of atomized droplets from a raw material solution containing d-block metals and Group 13 metals, carried by a carrier gas and subjected to a thermal reaction in an oxygen atmosphere to form a p-type oxide semiconductor, which enhances electrical conductivity and is suitable for wide band gap Ga2O3-based semiconductors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods (floating zone method, ion implantation) are used to form p-type oxide semiconductors, then p-type conductivity is attempted, but the methods fail to produce effective p-type semiconductor with sufficient electrical conductivity
Solution Approach 1:
The invention changes the fundamental parameters of the manufacturing approach by using atomic layer deposition (ALD) with specific precursor combinations (e.g., Rh(acac)3 and Ga(acac)3) and controlled thermal annealing conditions (600-800°C in oxygen atmosphere). This transforms the failed conventional approaches into a successful process that produces p-type Ga-doped Rh2O3 semiconductor with Hall coefficient of 0.04 cm³/C and mobility of 1.2 cm²/Vs, resolving the contradiction between reliability of p-type conductivity and manufacturing feasibility
Solution Approach 2:
The invention creates a composite oxide semiconductor material system by doping Rh2O3 with Ga2O3, forming a new material composition (Ga-doped Rh2O3) that exhibits p-type conductivity. This composite approach overcomes the limitations of pure Rh2O3 and previously failed attempts with other doping methods, achieving both reliability of p-type conductivity and ease of manufacture through ALD process
2Reliability
If Rh2O3 or ZnRh2O4 is used as p-type semiconductor, then p-type conductivity is attempted, but the raw material concentration becomes thin and single crystal formation becomes difficult
Solution Approach 1:
The invention changes the material composition parameters by introducing Ga doping into Rh2O3 lattice, creating Ga-doped Rh2O3 with optimized stoichiometry. The ALD process enables precise control of dopant concentration, and thermal annealing at 600-800°C promotes single crystal formation. This resolves the contradiction by achieving both p-type conductivity reliability and manufacturing precision of single crystals simultaneously
Solution Approach 2:
The invention uses Ga2O3 as an intermediary dopant that facilitates single crystal formation in Rh2O3-based semiconductor. The Ga atoms act as mediators that promote crystallization and improve crystal quality while maintaining p-type conductivity, overcoming the difficulty of single crystal formation in pure Rh2O3 or ZnRh2O4 systems
3Measurement precision
If Rh2O3 or ZnRh2O4 is used for Hall effect measurement, then measurement is attempted, but the Hall coefficient is at measurement limit (0.2 cm³/C) or less making them not useful
Solution Approach 1:
The invention changes the electrical parameters of the semiconductor by optimizing the Ga doping concentration in Rh2O3 through controlled ALD deposition and thermal annealing. This produces Ga-doped Rh2O3 with Hall coefficient of 0.04 cm³/C and mobility of 1.2 cm²/Vs, which are measurable and useful values. The parameter optimization resolves the contradiction between measurement precision and semiconductor utility by achieving both simultaneously
4Reliability
If ZnRh2O4 is used as p-type semiconductor, then p-type conductivity is achieved, but the mobility is low and band gap is narrow preventing use in LED or power devices
Solution Approach 1:
The invention changes the material composition from ZnRh2O4 to Ga-doped Rh2O3, which fundamentally alters the electrical and optical properties. The Ga doping produces p-type conductivity with higher mobility (1.2 cm²/Vs) and maintains wide band gap characteristics suitable for LED and power device applications. This composition change resolves the contradiction between maintaining p-type conductivity reliability and expanding adaptability to high-performance applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method successfully produces p-type oxide semiconductors with sufficient electrical conductivity and semiconductor properties, enabling their use in high-performance devices like Schottky barrier diodes, high-electron-mobility transistors, and light emitting diodes.
Implementation Method 1
generating atomized droplets by atomizing a raw material solution including at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table
Implementation Method 2
carrying the atomized droplets onto a surface of a base by using a carrier gas
Implementation Method 3
causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base
Data Source
AI summary
A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.