Physically Unclonable Function Chip Using Ion Injection
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Solution Overview
Problem
Existing physically unclonable function (PUF) technologies in semiconductor chips often complicate manufacturing processes and affect other chip properties, making it challenging to implement PUFs without influencing other device characteristics.
Innovation Solution
A method involving a substrate structure with encryption and reference device areas, where ion injections introduce impurities to form source and drain areas, generating random drain currents for password determination, ensuring compatibility with standard manufacturing processes and minimal impact on other properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a special process is used to implement physically unclonable functions, then security protection is improved, but manufacturing complexity and impact on other chip properties increase
Solution Approach 1:
The patent merges the PUF formation process with the standard CMOS manufacturing process by using the same interconnection layer (first interconnection layer) for both the encryption device and reference device. The ion injection step that creates the PUF effect is integrated into the existing manufacturing flow, eliminating the need for separate special processes and reducing overall manufacturing complexity while maintaining security protection.
Solution Approach 2:
The first interconnection layer serves multiple functions: it acts as both the interconnection structure for normal device operation and the medium for ion injection to create the physically unclonable function. This multi-functionality allows the same structural element to provide both electrical connectivity and security features, thereby avoiding additional manufacturing steps and reducing process complexity.
2Reliability
If a special process is used to implement physically unclonable functions, then security protection is improved, but other chip properties are affected
Solution Approach 1:
The ion injection is applied locally and selectively to specific regions of the first interconnection layer corresponding to the encryption device areas, while leaving other regions (such as reference device areas) unaffected. This localized approach ensures that the PUF function is created only where needed without adversely affecting other chip properties or device regions.
Solution Approach 2:
The chip is segmented into encryption device areas and reference device areas, with the ion injection process selectively targeting only the encryption device areas. This segmentation allows the PUF function to be implemented in specific regions without interfering with the functionality and properties of other chip regions, thereby maintaining adaptability and versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective protection of information data by creating a physically unclonable function without complicating the manufacturing process, ensuring strict randomness in password generation and compatibility with normal chip production.
Implementation Method 1
performing a first ion injection, the first ion injection including introducing first impurities into the first interconnection layer; and performing a second ion injection, the second ion injection including introducing second impurities into the first interconnection layer and the second interconnection layer
Implementation Method 2
the second impurities in the first interconnection layer are diffused to the encryption device areas at two sides of the first gate structure, to form a first source area and a first drain area used in the encryption device
Data Source
AI summary
The present application relates to a technical field of semiconductors, and discloses a device having a physically unclonable function, a method for manufacturing same, and a chip using same. The may method include: providing a substrate structure that comprises: a substrate comprising encryption device areas and reference device areas; at least one first gate structure on the encryption device areas and used in an encryption device and a first spacer layer on a side wall of the first gate structure; a first interconnection layer on the encryption device areas and the first spacer layer; at least one second gate structure on the reference device areas and used in a reference device and a second spacer layer on a side wall of the second gate structure; and a second interconnection layer on the reference device area and the second spacer layer; performing first ion injection, so as to introduce first impurities into the first interconnection layer; performing second ion injection, so as to introduce second impurities into the first and second interconnection layers, where a password of the device having a physically unclonable function is determined according to a drain current of each encryption device and a drain current of a reference device corresponding to the encryption device.