Multichannel Pulse Gas Delivery Controller for Semiconductor Etching
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Solution Overview
Problem
Current multichannel pulse gas delivery (PGD) devices are limited in their ability to perform high-speed processes due to slow transition times between alternating etch and passivation steps, requiring faster response times to control semiconductor manufacturing processes effectively, especially for advanced 3-D integrated circuits and plasma etching technologies.
Innovation Solution
A dedicated multichannel controller is introduced to manage and coordinate the operation of multiple channels in a PGD system, allowing for staggered charging and delivery phases, reducing computing overhead on the host controller and enabling faster pulse gas delivery rates by controlling inlet and outlet valves precisely based on temperature and pressure sensors' feedback.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a host controller is used to manage multiple channels in a PGD system, then system integration is simplified, but the transition times between alternating etch and passivation steps become too slow for high-speed processes
Solution Approach 1:
The control system is segmented into a host controller for high-level coordination and a dedicated multichannel controller for time-critical valve control. This segmentation allows the host controller to manage system integration while the dedicated controller handles fast transitions, resolving the contradiction between simplified integration and fast response times.
Solution Approach 2:
A dedicated multichannel controller acts as an intermediary between the host controller and the valve assemblies. It receives commands from the host controller and executes precise valve control with minimal latency, enabling fast transitions while maintaining system integration through the host controller's coordination.
2Quantity of substance
If mass flow controllers are used to control gas delivery, then flow rates are regulated, but the pulse gas delivery rate is limited and operational costs increase
Solution Approach 1:
The system uses periodic pulsed gas delivery instead of continuous mass flow control. Gas is delivered in precise pulses through rapidly switching valves, achieving both flow rate regulation and high delivery rates. The periodic action allows the system to exceed the limitations of traditional mass flow controllers while maintaining precise quantity control.
Solution Approach 2:
The patent replaces mechanical mass flow controllers with an electronic valve control system driven by a dedicated multichannel controller. This substitution eliminates the flow rate limitations of mechanical controllers while enabling faster pulse delivery rates through electronic switching, and reduces operational costs by eliminating expensive mass flow controller hardware.
3Device complexity
If traditional valve control systems are used in PGD devices, then system simplicity is maintained, but synchronization between etching and passivation steps is insufficient for advanced semiconductor manufacturing
Solution Approach 1:
The dedicated multichannel controller provides multi-functional capabilities including precise timing control, temperature compensation, and coordination of multiple valve assemblies. This universal controller maintains relative system simplicity while delivering the advanced synchronization required for etching and passivation steps in semiconductor manufacturing.
Solution Approach 2:
The system incorporates feedback mechanisms where the dedicated multichannel controller monitors valve positions, gas delivery timing, and process chamber conditions to precisely synchronize etching and passivation steps. This feedback enables manufacturing precision without significantly increasing system complexity, as the feedback loops are managed by the dedicated controller's processing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the overall pulse gas delivery rate by approximately 3.5 times compared to systems controlled by mass flow controllers, achieving faster and more precise delivery of gases, reducing operational costs, and allowing for autonomous high-speed processes with improved synchronization between etching and passivation steps.
Implementation Method 1
A pressure sensor and a temperature sensor is used to measure the pressure and temperature of the gas in the delivery chamber
Implementation Method 2
A pressure sensor and a temperature sensor is used to measure the pressure and temperature of the gas in the delivery chamber
Implementation Method 3
Gas is introduced into the delivery chamber through an inlet valve during a charging phase (when the corresponding inlet and outlet valves are respectively opened and closed)
Implementation Method 4
Gas is delivered from the delivery chamber through an outlet valve during a delivery phase
Data Source
AI summary
A pulse gas delivery system for delivering a sequence of pulses of prescribed amounts of gases to a process tool, comprises: (a) a plurality of channels, each including (i) a gas delivery chamber; (ii) an inlet valve connected so as to control gas flowing into the corresponding gas delivery chamber; and (iii) an outlet valve connected so as to control the amount of gas flowing out of the corresponding gas delivery chamber; and (b) a dedicated multiple channel controller configured so as to control the inlet and outlet valves of each of the channels so that pulses of gases in prescribed amounts can be provided to the process tool in a predetermined sequence in accordance with a pulse gas delivery process.