Pulse Gate Current Temperature Sensing in Power Semiconductors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for temperature management in power semiconductor devices, such as those using multiple gate electrodes or high-speed processors, restrict the miniaturization of power modules due to increased size requirements and complexity.
Innovation Solution
A semiconductor device with a pulse current supply, drive control unit, current detection unit, voltage detection unit, and timing control unit that estimates temperature based on current and voltage measurements during on- and off-periods, allowing for compact design without reducing the effective area of the power semiconductor element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a plurality of gate electrodes is provided to measure temperature from gate resistance, then temperature measurement capability is improved, but the effective area of the power semiconductor element is reduced
Solution Approach 1:
The patent extracts the temperature measurement function from the gate electrodes themselves and relocates it to external measurement circuits. By measuring the voltage between the control terminal and negative electrode terminal while supplying a pulse current, the system can determine gate resistance and temperature without adding physical structures to the semiconductor element, thus preserving the effective area.
Solution Approach 2:
The patent introduces external measurement circuits as intermediaries to perform temperature measurement. Instead of directly modifying the gate electrodes, the system uses pulse current supply units, voltage detection units, and temperature estimation units as mediators to indirectly measure temperature through gate resistance, thereby avoiding the need for additional gate electrodes.
2Measurement precision
If a highly accurate time measurement mechanism and high-speed processor are provided to measure gate voltage rise time, then temperature measurement accuracy is improved, but the size of the power module increases
Solution Approach 1:
The patent employs relatively simple measurement circuits rather than high-speed processors and accurate time measurement mechanisms. By using pulse current supply and voltage detection with timing control, the system achieves temperature measurement without requiring expensive, high-performance components, thus avoiding the increase in power module size.
Solution Approach 2:
The patent uses periodic pulse current supply to the control terminal to enable temperature measurement. By supplying pulse current during specific periods (on-period or off-period) and measuring the resulting voltage, the system can estimate temperature without requiring continuous high-speed processing, thereby reducing the need for large, high-performance processors.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate temperature measurement and control in power semiconductor devices, facilitating miniaturization while maintaining effective area and reducing energy losses, thus preventing thermal runaway.
Implementation Method 1
the temperature estimation unit estimates the temperature of the semiconductor element on the basis the detection values of the current detection unit and the voltage detection unit
Implementation Method 2
The voltage detection unit detects a voltage between the control terminal or the negative electrode terminal and a reference potential
Data Source
AI summary
In a semiconductor device (100) that drives and controls a semiconductor element (10), a current control unit (1) is provided with a pulse current supply (20) for passing a current between a control terminal (G) and a negative electrode terminal (S) of the semiconductor element (10). A timing control unit (3) causes the pulse current supply (20) to output a pulsed current during an on-period after the semiconductor element shifts to an on state or during an off-period after the semiconductor element shifts to an off state. A temperature estimation unit (7) estimates the temperature of the semiconductor element (10) on the basis of changes in current and voltage due to current supply from the pulse current supply (20).