Rotating Substrate Pulse Heating for Non-Radial Temperature Control
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Solution Overview
Problem
Rapid thermal processing systems face challenges in achieving uniform temperature profiles across semiconductor substrates due to non-radial temperature non-uniformities, which are exacerbated by substrate misalignment, thermal properties variations, and patterns on the substrate, leading to significant temperature deviations.
Innovation Solution
The implementation of a thermal processing chamber with pulse heating elements and a sensor assembly to measure substrate temperatures, allowing for adjustments in the frequency, phase, and amplitude of the heating energy to achieve uniformity, along with auxiliary heating sources and a reflector plate for enhanced emissivity and backside heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional radial heating zones are used, then radial temperature uniformity is improved, but non-radial temperature non-uniformities caused by misalignment and substrate patterns cannot be resolved
Solution Approach 1:
The heating system is divided into multiple independently controllable heating zones arranged azimuthally around the substrate. Each zone can be controlled separately to address specific non-radial temperature non-uniformities, allowing the system to adapt to misalignment and substrate pattern variations that radial zones cannot handle.
Solution Approach 2:
Different heating zones are assigned different power levels and phases based on local temperature requirements. The controller adjusts each zone's heating parameters individually to compensate for non-radial non-uniformities, applying localized heating corrections rather than uniform radial heating.
2Temperature
If substrate rotation is used to average temperature distribution, then overall temperature uniformity is improved, but non-radial non-uniformities are exacerbated without active compensation
Solution Approach 1:
The heating zones are activated in periodic sequences synchronized with substrate rotation. By controlling the timing and duration of heating pulses in each zone, the system compensates for non-radial non-uniformities while utilizing rotation to achieve overall uniformity, maintaining precision at specific locations.
Solution Approach 2:
Temperature sensors continuously monitor the substrate surface, and the controller uses this feedback to adjust heating zone power levels in real-time. This closed-loop control compensates for non-radial non-uniformities caused by misalignment and substrate patterns, maintaining manufacturing precision despite rotation.
3Temperature
If multiple heating sources are added to correct non-uniformities, then temperature uniformity is improved, but device complexity increases
Solution Approach 1:
The multiple heating zones serve multiple functions: they provide overall heating, compensate for radial non-uniformities, and correct non-radial non-uniformities caused by misalignment and substrate patterns. This multi-functionality reduces the need for additional separate correction mechanisms, managing device complexity while improving temperature uniformity.
Solution Approach 2:
The heating zones dynamically adjust their power levels and activation sequences based on real-time temperature measurements and substrate position. This dynamic control allows the system to achieve temperature uniformity with adaptive parameter adjustment rather than requiring excessive static heating elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces non-radial temperature non-uniformities by synchronizing the heating energy with substrate rotation and adjusting power phases and amplitudes, ensuring consistent temperature profiles across the substrate, even in the presence of edge ring misalignment and substrate patterns.
Implementation Method 1
During RTP, thermal radiation is generally used to rapidly heat a substrate in a controlled environment to a maximum temperature of up to about 1350° C. High intensity tungsten halogen lamps are commonly used as the source of heat radiation.
Implementation Method 2
a sensor assembly configured to measure temperature of the substrate at a plurality of locations
Implementation Method 3
a reflector plate for enhanced emissivity and backside heating
Implementation Method 4
a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate
Data Source
AI summary
Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.