Pulse Measurement System for Semiconductor Resistance Devices
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Solution Overview
Problem
Existing methods for determining pulse properties of semiconductor resistance devices, such as RRAMs, are inefficient as they require multiple steps and high voltages, leading to device stress and unreliable measurements of pulse currents and dynamic resistances.
Innovation Solution
A system comprising probes, a pulse generator, and an oscilloscope with dual channels allows for real-time determination of pulse currents and dynamic resistances by applying a pulse voltage and measuring voltage drops across the device, reducing testing time and preventing device stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a current-voltage meter is used to determine reset current by applying high voltage greater than threshold voltage, then reset current can be determined, but the PRAM is stressed and damaged, resulting in significant change in the relationship between pulse current and program resistance
Solution Approach 1:
The patent changes the measurement parameter from DC voltage to pulse voltage with width less than 1 microsecond. This parameter change allows measurement of reset current without applying sustained high voltage that would damage the device, thus maintaining device integrity while achieving measurement precision
Solution Approach 2:
The patent uses periodic pulse voltage instead of continuous DC voltage for measurement. The pulse width is controlled to be less than 1 microsecond, providing periodic action that enables measurement without continuous stress on the device, preventing damage while maintaining measurement capability
2Measurement precision
If a pulse voltage generator and current-voltage meter are used to determine program resistance and reset current, then these properties can be determined, but pulse current cannot be simultaneously determined while applying pulse voltage
Solution Approach 1:
The patent merges the voltage measurement and current measurement functions into a single oscilloscope system. By using the oscilloscope to measure both voltage across the device and voltage across a known series resistor, the system simultaneously determines pulse current and program resistance without requiring separate measurement instruments
Solution Approach 2:
The oscilloscope is used for multiple measurement functions simultaneously - measuring pulse voltage across the PRAM and measuring pulse current through voltage division across a series resistor. This multi-functionality eliminates the need for separate current-voltage meter and pulse generator, reducing system complexity
3Measurement precision
If multiple measurement steps are used to determine resistance and current properties, then comprehensive properties can be determined, but testing time increases and efficiency decreases
Solution Approach 1:
The patent implements continuous measurement of pulse voltage and pulse current simultaneously using the oscilloscope's dual channels. This eliminates the need for alternating between different measurement modes and instruments, maintaining continuous useful action throughout the measurement process and significantly improving testing efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and reliable real-time measurement of pulse currents and dynamic resistances in a single operation, reducing testing time and preventing device damage, while maintaining the semiconductor resistance device's integrity.
Implementation Method 1
The oscilloscope calculates a pulse current flowing in terminals of the semiconductor resistance device using the second channel
Implementation Method 2
The oscilloscope determines a dynamic resistance of the semiconductor resistance device using the first and second channels
Data Source
AI summary
Provided are a system and method of determining pulse properties of a semiconductor device. An embodiment of the system includes at least one pair of first and second probes electrically contacting terminals of the semiconductor resistance device, a pulse generator connected to the first probe and outputting pulse signals, an oscilloscope having at least one pair of first and second channels, wherein the pulse electric signal is supplied to the first channel and the first probe and the second channel is connected to the second probe. The oscilloscope calculates a pulse current flowing in terminals of the semiconductor resistance device using the second channel and determines a dynamic resistance of the semiconductor resistance device using the first and second channels.