Pulse-Modulated Plasma Power for Stable 10 nm Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma etching technologies struggle to achieve high precision and stability for micro-fabrication at the 10 nm level, particularly in semiconductor gate processing, due to discontinuous changes in plasma power leading to unstable discharge and etching rate fluctuations.
Innovation Solution
A plasma processing method that modulates radio-frequency power using a pulse generator to gradually change the plasma dissociation state over time by controlling the duty ratio of the pulse, ensuring stable and precise etching through synchronized microwave and bias power adjustments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma power is continuously changed during etching, then the processing profile can be adjusted, but the plasma becomes unstable and discharge flickers
Solution Approach 1:
The patent applies periodic pulse modulation to the plasma power instead of continuous change. By switching plasma power on and off periodically with controlled duty ratios, the system achieves stable discharge while still enabling profile control through parameter modulation over time. This resolves the contradiction by replacing continuous variation with periodic cycling.
Solution Approach 2:
The patent dynamically adjusts the duty ratio of pulse-modulated plasma power during the etching process. By changing the duty ratio at different time points, the system adapts the plasma conditions to match the evolving processing profile requirements while maintaining stable discharge through pulsed operation rather than continuous power adjustment.
2Productivity
If plasma power is changed to adjust etching characteristics, then the etching rate can be controlled, but the conduction mode and electric field distribution become discontinuous
Solution Approach 1:
The patent uses periodic pulse modulation to control plasma power, allowing the system to maintain stable conduction modes during each pulse cycle while achieving etching rate control through duty ratio adjustment. This periodic approach prevents the discontinuous transitions that occur with continuous power changes.
Solution Approach 2:
The patent pre-establishes stable plasma discharge conditions through pulse modulation before initiating etching. By maintaining stable conduction modes through periodic power application, the system prepares a consistent plasma environment that enables controlled etching rates without disrupting the fundamental plasma state.
3Manufacturing precision
If conventional etching methods are used for 10 nm-level micro-fabrication, then the process is simple, but the precision and stability are insufficient
Solution Approach 1:
The patent introduces periodic pulse modulation to conventional etching processes to achieve 10 nm-level precision. This adds temporal control dimensions to the etching process, enabling precise profile control and stability required for advanced micro-fabrication while maintaining relative process simplicity through straightforward power modulation.
Solution Approach 2:
The patent dynamically controls plasma parameters through time-varying duty ratios to achieve the precision required for 10 nm-level fabrication. This dynamic adjustment enables adaptation to changing processing conditions and profile requirements, providing the necessary control authority for high-precision work.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables stable and precise etching by maintaining plasma stability and control, achieving desired processing profiles even at the 10 nm level, enhancing reproducibility and precision in micro-fabrication.
Implementation Method 1
a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma
Implementation Method 2
controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse
Data Source
AI summary
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.