Pulse Plasma Generator Circuit With Non-Inductive Arc Suppression
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Solution Overview
Problem
High-performance pulse discharge in magnetron sputtering is unstable due to parasitic inductance, leading to unwanted arcs and noise in plasma, which can damage sensitive devices and substrates, and existing suppression methods are inadequate for processes requiring precise control.
Innovation Solution
The use of a non-inductive resistor with low parasitic inductance, combined with transistor and capacitor circuits, to stabilize the power supply and prevent arcs in pulse plasma generators, ensuring stable voltage and current during magnetron sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If standard arc suppression methods are used, then arc damage is prevented, but residual energy creates subsequent arcs and the temporal constant is too large for sensitive deposition processes
Solution Approach 1:
The patent extracts the harmful parasitic inductance from the power supply circuit by using non-inductive resistors and carefully designed circuit topology. This removes the element causing the temporal delay in arc suppression while maintaining the necessary energy dissipation function.
Solution Approach 2:
The patent changes the electrical parameters of the suppression circuit by using non-inductive resistors with specific resistance values that optimize the temporal constant. This allows faster response to arcs while maintaining effective energy suppression, adapting the circuit parameters to the specific requirements of sensitive deposition processes.
2Power
If parasitic inductance is present in the circuit, then energy storage is possible, but voltage and current stability deteriorates during pulse switching
Solution Approach 1:
The patent removes parasitic inductance from the power supply circuit by using non-inductive resistors and optimized circuit layout. This extraction eliminates the source of voltage and current instability during pulse switching while maintaining necessary power delivery capabilities.
Solution Approach 2:
The patent introduces non-inductive resistors as intermediary elements that provide necessary resistance without introducing harmful inductance. These resistors act as mediators between the power source and the plasma discharge, stabilizing voltage and current while allowing controlled energy dissipation.
3Productivity
If high density pulse discharge is used, then ionization of sputtered particles increases, but unwanted arcs and noise increase causing damage to substrates
Solution Approach 1:
The patent converts the harmful effect of high current density into a beneficial process by using non-inductive resistors to control current rise. The same high power that could cause arcs is channeled productively into the plasma discharge, maintaining high deposition rates while preventing arc formation through controlled energy dissipation.
Solution Approach 2:
The patent introduces non-inductive resistors as intermediary elements that mediate between the high power pulse discharge and the plasma. These resistors smooth current transitions and prevent the abrupt current changes that lead to arcs, protecting substrates while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution significantly reduces voltage and current oscillations, preventing the transition to arc discharge and maintaining stable plasma conditions, thus improving the quality and consistency of thin film deposition.
Implementation Method 1
The use of a non-inductive resistor with low parasitic inductance, combined with transistor and capacitor circuits, to stabilize the power supply
Implementation Method 2
combined with transistor and capacitor circuits, to stabilize the power supply
Implementation Method 3
combined with transistor and capacitor circuits, to stabilize the power supply and prevent arcs in pulse plasma generators
Implementation Method 4
Magnetron sputtering is one of the most common methods of preparation of thin layers with specific features
Implementation Method 5
The burning discharge causes a bombardment of the cathodes by positive ions and creation of metal gases which subsequently condense on the anode
Implementation Method 6
during which a high density of electrons is produced in plasma, which leads to ionization of a specific amount of sputtered particles with energy in a hyperthermal scope (1 to 100 eV)
Data Source
AI summary
Connection includes transistor, transistor exciter controlled by the frequency generator and/or programmable unit, the power source of voltage, the unit with capacitors. The voltage power source is connected to the transistor through the unit with capacitors. The stabilizing non-inductive resistor is connected to the power supply branch for the magnetron with transistor. The power stabilizing non-inductive resistor is a resistor with the wire wound by Ayrton-Perry-type winding and/or the resistor with low value of the parasitic inductance on the basis of thin layers. The electronic control circuits of the gate of the transistor include a frequency generator with the cut-off switch and with support elements and also include an exciter with support elements. The connection with the stabilizing non-inductive resistor is used in case of the bipolar and/or multi-circuit pulse plasma generator. The depolarization voltage is led from the outside source through the capacitor to the depolarization block.