Pulsed CVD Graphene Formation on Copper Foil

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Solution Overview

Problem

The existing chemical vapor deposition (CVD) methods for forming graphene layers are hindered by the quality and cost of copper foils, leading to either high-quality but expensive graphene with limited dimensions or low-quality graphene with multilayer patches when using industrial-grade copper.

Innovation Solution

A pulsed CVD process is employed, where an organic compound gas is introduced during one period and a carbon etching gas during another, alternating periods to control graphene growth on a support layer, reducing multilayer defects by etching dissolved carbon atoms during the etching gas introduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high quality copper foil is used, then graphene layer quality is improved, but cost increases and lateral dimensions are limited

Engineering Contradiction:

Improvegraphene layer qualityVSAvoidcost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention changes the process parameters by introducing a pulsed CVD method with alternating carbon-rich and carbon-poor phases, allowing high-quality graphene formation on low-cost industrial copper foil without requiring high-quality copper substrates

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The invention applies periodic action through pulsed gas introduction cycles, alternating between carbon-rich phases for graphene growth and carbon-poor phases for etching excess carbon, enabling high-quality graphene formation on inexpensive copper foil

Inventive Principle:

Principle #19Periodic action

2Manufacturing precision

If high quality copper foil is used, then graphene layer quality is improved, but lateral dimensions are limited

Engineering Contradiction:

Improvegraphene layer qualityVSAvoidlateral dimensions

Core Design Contradiction:

Manufacturing precisionVSLength of moving object

Solution Approach 1:

The pulsed CVD process with alternating carbon-rich and carbon-poor phases enables continuous graphene growth over larger areas by periodically etching excess carbon at grain boundaries and defects, allowing lateral dimensions to exceed the limitations of conventional continuous CVD on high-quality copper

Inventive Principle:

Principle #19Periodic action

Solution Approach 2:

By changing from continuous to pulsed gas introduction and adjusting the carbon chemical potential through periodic variation, the invention enables extended lateral growth dimensions while maintaining high graphene quality on industrial copper foil

Inventive Principle:

Principle #35Parameter changes

3Ease of manufacture

If industrial quality copper foil is used, then cost is reduced, but graphene layer quality deteriorates with multilayer patches

Engineering Contradiction:

ImprovecostVSAvoidgraphene layer quality

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The invention converts the harmful effect of carbon dissolution in industrial copper foil into a beneficial process by using pulsed etching phases to remove dissolved carbon and prevent multilayer patch formation, thereby achieving high-quality monolayer graphene on low-cost copper substrates

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

Through periodic alternation between carbon-rich growth phases and carbon-poor etching phases, the invention continuously removes excess carbon atoms that would otherwise form multilayer patches, enabling high-quality graphene formation on inexpensive industrial copper foil

Inventive Principle:

Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This process significantly reduces multilayer defects, enabling the formation of high-quality, macroscale graphene layers with improved homogeneity and reduced costs by minimizing carbon atom dissolution in the support layer.

Implementation Method 1

forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas

Methodology Applied

Scientific EffectChemical etching:

Data Source

PatentUS10184184B2Process and device for forming a graphene layer

Publication Date: 2019.01.22 CENT NAT DE LA RECH SCI (C N R S)

AI summary

The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.