Pulsed DC Magnetron Sputtering for Solid Element Ion Implantation
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Solution Overview
Problem
Existing plasma ion implantation technologies are limited in their ability to implant ions of solid elements at room temperature and are not suitable for three-dimensional objects due to line-of-sight limitations and high equipment costs, with most methods only capable of implanting gas-state ions.
Innovation Solution
A method and apparatus using a vacuum chamber with a magnetron sputtering source and RF antenna to generate plasma ions of solid elements through pulsed DC power and synchronized high negative voltage pulses, allowing for effective ion implantation of non-gaseous elements at room temperature on the surface of samples.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If plasma ion implantation uses gas-state ions, then ion implantation can be achieved, but solid element ions cannot be implanted at room temperature
Solution Approach 1:
The patent applies pulsed DC power to the magnetron sputtering source, switching between high power (for sputtering solid element ions) and low power (for maintaining plasma) states. This parameter change enables the system to handle solid element ions that cannot be implanted using conventional gas-state plasma methods
Solution Approach 2:
The patent uses periodic pulsed DC power application with specific duty cycles to generate solid element ion plasma. The periodic switching between high and low power states creates the necessary conditions for sputtering solid targets while maintaining plasma stability, enabling room temperature implantation of solid elements
2Manufacturing precision
If ion beam rastering is used for uniform ion implantation, then uniformity can be achieved, but masking and three-directional rotation are required
Solution Approach 1:
Instead of moving the ion beam to scan across the sample (conventional approach), the patent inverts the approach by using plasma that naturally surrounds and covers the sample from all directions. The magnetron sputtering source generates plasma that envelops the sample, eliminating the need for mechanical scanning and rotation
Solution Approach 2:
The plasma ion implantation apparatus performs multiple functions simultaneously: it generates ions, accelerates them, and distributes them uniformly across the sample surface without requiring separate masking or rotation mechanisms. The single plasma source handles what would traditionally require multiple subsystems
3Productivity
If conventional plasma ion implantation is used, then ion implantation speed can be rapid, but only gas-state ions can be implanted
Solution Approach 1:
The patent changes the power parameter from continuous to pulsed DC, enabling the magnetron sputtering source to operate in a regime that produces solid element ion plasma. This parameter change maintains rapid implantation speeds while expanding element state coverage to include solids
Solution Approach 2:
The magnetron sputtering source acts as an intermediary that converts solid target material into ionized plasma form. This intermediary process enables solid elements to be implanted at high speeds by transforming them into a plasma state suitable for rapid implantation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the implantation of solid elements at room temperature with improved uniformity and control, overcoming line-of-sight limitations and reducing equipment costs, as demonstrated by successful titanium ion implantation into silicon samples.
Implementation Method 1
a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element
Implementation Method 2
magnetron sputtering source so as to generate plasma ions
Implementation Method 3
inductively coupled plasma may be generated in the vacuum chamber via RF antenna so as to increase ionization rate
Implementation Method 4
increase ionization rate of a solid element
Implementation Method 5
a second power is supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample
Implementation Method 6
high negative voltage pulse accelerating plasma ions
Data Source
AI summary
Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.