Pulsed Electromagnet Control for Uniform Plasma Processing

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Solution Overview

Problem

Existing substrate processing methods in semiconductor manufacturing face challenges in achieving uniform plasma distribution due to discrepancies in plasma uniformity, which affect the precision and efficiency of processes such as etching, ashing, ion implantation, and thin film deposition.

Innovation Solution

A substrate processing method involving the application of DC pulse signals to electromagnets within a chamber to generate and control magnetic fields, with specific timing patterns to enhance plasma distribution, including alternating levels and durations in multiple cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a DC signal is provided to electrodes inside a process chamber to form plasma, then plasma is generated for substrate processing, but discrepancies in plasma uniformity exist across the substrate surface

Engineering Contradiction:
Improveplasma distribution uniformityVSAvoidprocess precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent applies periodic pulsed DC signals to electromagnets instead of continuous DC signals. The pulsed nature of the signal creates time-varying magnetic fields that periodically enhance plasma generation and improve uniformity across the substrate surface during plasma processing

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent changes the electrical parameters by using pulsed DC signals with varying amplitude and duty cycle instead of constant DC signals. This parameter modification allows dynamic control of magnetic field strength, thereby improving plasma distribution uniformity while maintaining process precision

Inventive Principle:
Principle #35Parameter changes

2Duration of action of stationary object

If continuous DC signal is applied to electromagnets for plasma generation, then plasma is maintained continuously, but plasma uniformity discrepancies persist

Engineering Contradiction:
Improveplasma maintenance durationVSAvoidplasma uniformity
Core Design Contradiction:
Duration of action of stationary objectVSQuantity of substance

Solution Approach 1:

The patent employs periodic pulsed DC signals with optimized duty cycles to maintain plasma continuously while improving uniformity. The pulsed signals create periodic magnetic field enhancements that promote more uniform plasma distribution over time without interrupting plasma maintenance

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent introduces dynamic control by using time-varying pulsed DC signals instead of static continuous signals. The dynamic adjustment of signal amplitude and timing allows optimization of plasma uniformity while maintaining continuous plasma presence throughout the processing cycle

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Improves process characteristics by achieving more uniform plasma distribution, enhancing the precision and efficiency of semiconductor manufacturing processes like etching and deposition.

Implementation Method 1

providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Implementation Method 2

forming a plasma inside the chamber, and processing the substrate with the plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS20260090301A1Substrate processing method, substrate processing device, and method of manufacturing a semiconductor device
Publication Date: 2026.03.26 SAMSUNG ELECTRONICS CO LTD
  • US20260090301A1 patent drawing
  • US20260090301A1 patent drawing
  • US20260090301A1 patent drawing

AI summary

A substrate processing device comprises a process chamber which forms an internal space; a substrate support disposed inside the process chamber and configured to support a substrate; a first electrode configured to generate a plasma in the internal space; an electromagnet configured to generate a magnetic field in the internal space to control a distribution of the plasma; and a DC power supply unit configured to supply a first DC pulse signal to the electromagnet. The first DC pulse signal is repeated at a first period to include a plurality of cycles, each cycle including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, a second level different from the first level during the second section, and the first and second sections each have a duration of 0.1 to 10 seconds.