Pulsed I-V Measurement Apparatus for Semiconductor Devices
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Solution Overview
Problem
DC measurements for semiconductor devices often result in significant heating, leading to inaccurate results, and existing techniques that combine DC bias with pulsed signals suffer from bandwidth limitations and calibration difficulties due to additional circuitry.
Innovation Solution
A method and apparatus that connect pulse units between the signal and return terminals of a semiconductor device to measure pulsed I-V characteristics, using a pulse source and pulsed current measuring device to isolate and measure current through a load resistance, while employing floating oscilloscopes or differential probes to cancel common mode voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If DC measurements are used to characterize semiconductor devices, then the measurement process is simple, but significant heating occurs resulting in inaccurate measurements
Solution Approach 1:
The patent applies periodic pulsed measurements instead of continuous DC measurements. The measurement system applies voltage pulses with duty cycles typically between 1% and 10%, allowing the device to cool between pulses. This periodic action reduces average power dissipation and heating while maintaining measurement capability through time-domain sampling of the pulsed current response.
2Adaptability or versatility
If additional circuitry is used to combine DC bias with pulsed signals, then DC bias can be applied to the device, but bandwidth limitations and calibration difficulties occur
Solution Approach 1:
The patent merges the DC bias source and pulsed signal source into a single integrated voltage source. Instead of using separate circuitry to combine DC and AC signals, the invention generates a composite voltage signal V(t) = V_DC + V_pulse(t) directly, where V_DC provides the bias and V_pulse(t) provides the time-varying measurement signal. This eliminates bandwidth limitations and calibration issues associated with signal combining circuitry.
Solution Approach 2:
The voltage source in the patent performs multiple functions simultaneously: it provides DC bias, generates pulsed signals, and applies the combined signal to the device under test. This multi-functional approach eliminates the need for separate DC bias circuitry and pulsed signal generation circuitry, reducing overall system complexity while maintaining full capability.
3Temperature
If pulsed measurements are implemented with separate DC bias circuitry, then heating is reduced, but bandwidth limitations are introduced
Solution Approach 1:
The patent merges the DC bias source and pulsed signal source into a single integrated voltage source. Instead of using separate circuitry to combine DC and AC signals, the invention generates a composite voltage signal V(t) = V_DC + V_pulse(t) directly, where V_DC provides the bias and V_pulse(t) provides the time-varying measurement signal. This eliminates bandwidth limitations and calibration issues associated with signal combining circuitry.
Data Source
AI summary
A method and apparatus for measuring a pulsed I-V characteristic of a DUT that has a signal terminal and a return terminal includes connecting a pulse unit between the signal and return terminals, the pulse unit having a pulse source and a pulsed current measuring device; pulsing the signal terminal with the pulse unit; measuring a pulsed current through the signal terminal with the current measuring device in response to the pulsing; and outputting, storing, displaying, or otherwise using the current measurement.


