Pulsed Plasma Spacer Deposition to Mitigate Underlayer Damage
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Solution Overview
Problem
Existing methods for forming patterned structures on substrates result in undesired plasma damage to the underlayer, particularly in extreme ultraviolet (EUV)-based multiple patterning processes, leading to low plasma reactivity and plasma ignition failures, and spacer films with degraded film properties.
Innovation Solution
A method involving reduced plasma power and the use of an inert gas to form and maintain plasma, with pulsed plasma power and controlled gas flowrates to mitigate underlayer damage and maintain deposited layer quality, using silicon nitride and silicon oxide deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If lower RF power is used during deposition of spacer layer, then underlayer damage is reduced, but plasma reactivity decreases and plasma ignition failures occur
Solution Approach 1:
The patent applies pulsed plasma deposition where plasma is activated in periodic pulses rather than continuously. This allows the plasma to react vigorously during each pulse window while providing rest periods that reduce cumulative damage to the underlayer, effectively decoupling peak reactivity from sustained damage accumulation
Solution Approach 2:
The patent dynamically adjusts plasma power parameters during the deposition process, using time-varying power profiles that increase reactivity when needed for film quality while reducing power during critical periods to minimize underlayer damage, making the plasma process adaptive rather than static
2Object-affected harmful factors
If lower RF power is used during deposition of spacer layer, then underlayer damage is reduced, but plasma ignition failures occur
Solution Approach 1:
The patent applies preliminary conditioning steps before main deposition, including plasma pre-treatment and gradual power ramp-up sequences that prepare the plasma environment for stable ignition at lower power levels, eliminating the need for high initial power that causes underlayer damage
3Productivity
If traditional plasma deposition is used, then deposition speed is maintained, but spacer film quality degrades due to underlayer damage
Solution Approach 1:
Through periodic plasma pulsing, the system achieves high effective deposition rates during active plasma phases while the off-phases allow underlayer recovery, maintaining both productivity and film quality by separating deposition activity from damage accumulation periods
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces plasma-induced damage to the underlayer while maintaining the quality of the deposited layer, ensuring high etch selectivity and plasma reactivity, even at reduced power levels.
Implementation Method 1
forming a plasma for a plasma period using the inert gas to thereby deposit the material layer on a surface of the substrate
Implementation Method 2
depositing a material layer by providing a silicon precursor to the reaction chamber for a silicon precursor pulse, providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse
Data Source
AI summary
Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the reaction chamber for a reactant pulse period, providing an inert gas to the reaction chamber for an inert gas pulse period, and providing a plasma power to form a plasma within the reaction chamber for a plasma pulse period. The inert gas can be provided during the plasma period and/or the plasma power can be pulsed to mitigate any damage to an underlying layer, while providing desired properties of the material layer.