Pulsed RF Plasma Deposition for Low-Particle Nitride Films
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Solution Overview
Problem
Existing plasma processing methods for depositing nitride films on substrates can cause damage to quartz components due to the generation of active nitrogen species from high-energy electrons, leading to increased particle generation.
Innovation Solution
A plasma processing method that supplies a nitrogen-containing gas and high-frequency power to generate plasma, using a pulse wave of high-frequency power to control electron density and temperature, thereby reducing quartz damage and particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-frequency power is supplied to generate plasma for depositing nitride film, then plasma generation is achieved, but active nitrogen species damage quartz components causing particle generation
Solution Approach 1:
The patent applies periodic action by supplying high-frequency power in a pulsed manner rather than continuously. The power supply is divided into multiple cycles with each cycle containing an ignition period and a processing period. During the ignition period, power is supplied to generate plasma; during the processing period, power is reduced or stopped to prevent quartz damage from active nitrogen species, thus resolving the contradiction between maintaining plasma generation and preventing particle formation.
2Stability of the object's composition
If continuous high-frequency power is supplied to maintain plasma, then plasma stability is improved, but electron temperature increases causing more quartz damage
Solution Approach 1:
The patent uses periodic action by implementing cyclic power supply with distinct ignition and processing periods. During the ignition period, high power is supplied to establish plasma stability. During the processing period, power is reduced or interrupted, allowing electron temperature to decrease and preventing quartz damage, while plasma stability is maintained through the cyclic nature of the power supply.
Solution Approach 2:
The patent applies dynamics by making the power supply conditions variable rather than static. The power supply parameters (frequency, power level, duration) are dynamically adjusted between ignition and processing periods, and can be further optimized by varying pulse width, duty cycle, and number of cycles to balance plasma stability with electron temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively suppresses the generation of active nitrogen species, maintaining high electron density while lowering electron temperature, thus reducing particle formation and enhancing the stability of the plasma processing system.
Implementation Method 1
supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space
Data Source
AI summary
With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.