Pulsed Voltage Compensation for Stable Plasma Sheath Control

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Solution Overview

Problem

Existing plasma-assisted etching processes struggle to reliably form high aspect ratio features due to challenges in controlling the plasma sheath and ion energy distribution, particularly with voltage decay during the ion current stage, which affects the anisotropy and within-substrate processing uniformity.

Innovation Solution

A method and system for generating a compensated voltage waveform by detecting characteristics of the plasma sheath using sensors, calculating a compensation factor based on voltage decay and sheath coupling values, and adjusting the waveform to maintain a constant sheath potential during plasma processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If high voltage DC pulses are delivered to control the plasma sheath, then ion energy control is improved, but voltage decay during the ion current stage causes undesirable ion energy distribution

Engineering Contradiction:
Improveion energy controlVSAvoidion energy distribution uniformity
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The system measures the actual substrate potential during plasma processing and uses this feedback to dynamically adjust the pulsed voltage waveform. The controller modifies the compensation waveform in real-time based on measured voltage decay, ensuring consistent ion energy delivery despite varying plasma conditions.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system dynamically changes the voltage waveform parameters (amplitude, duration, shape) to compensate for voltage decay. By adjusting the compensation waveform parameters based on measured substrate potential, the system maintains desired ion energy distribution across varying process conditions.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If voltage compensation is applied to maintain constant sheath potential, then processing uniformity is improved, but the system complexity increases

Engineering Contradiction:
Improveprocessing uniformityVSAvoidwaveform generation system
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The system uses the plasma processing chamber's own measurements (substrate potential) to generate its own compensation waveform. The measured substrate potential directly informs the compensation waveform generation, allowing the system to self-regulate without external intervention or complex external control systems.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The controller performs multiple functions: it generates the initial pulsed voltage waveform, measures the substrate potential, calculates the compensation waveform, and delivers the compensated waveform. This multi-functionality reduces the need for separate dedicated components for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Measurement precision

If sensors are used to detect plasma sheath characteristics, then control precision is improved, but the measurement and detection difficulty increases

Engineering Contradiction:
Improveplasma sheath characterizationVSAvoidsubstrate potential measurement
Core Design Contradiction:
Measurement precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The system uses an intermediary measurement approach by measuring substrate potential through the electrostatic chuck's electrical characteristics rather than directly measuring the plasma sheath. This indirect measurement method simplifies the detection process while providing sufficient information for compensation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables fine-tuning and control over the plasma sheath, resulting in a narrower ion energy distribution function and improved uniformity in forming high aspect ratio features.

Implementation Method 1

the substrate is positioned on an electrostatic chuck (ESC) disposed in a processing chamber

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Implementation Method 2

ions are accelerated from the plasma towards the substrate across a plasma sheath

Methodology Applied
Scientific EffectIon acceleration: Ion Repulsion/Attraction

Implementation Method 3

a plasma is formed over the substrate

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS12586768B2Pulsed voltage compensation for plasma processing applications
Publication Date: 2026.03.24 APPLIED MATERIALS INC
  • US12586768B2 patent drawing
  • US12586768B2 patent drawing
  • US12586768B2 patent drawing

AI summary

Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, which generally includes delivering a first waveform with an associated setpoint from an energy source; detecting at least one characteristic of the first waveform; estimating a voltage decay during a portion of a pulse during the first waveform; calculating a compensation factor; and adjusting the at least one characteristic using the compensation factor to adjust a voltage decay.