Purge Nozzle Unit Vertical Movement for FOUP Gas Concentration
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Solution Overview
Problem
Existing purge systems for semiconductor manufacturing face challenges in maintaining high concentrations of purge gases within Front-Opening Unified Pods (FOUPs) due to structural limitations and interference issues, leading to inefficient purging and potential wafer contamination.
Innovation Solution
A purge nozzle unit with a simplified design that uses pressure regulation between the nozzle main body and holder to vertically move the nozzle, eliminating the need for additional moving parts and allowing for accurate and reliable gas injection and extraction through ports on the bottom of the FOUP, thereby maintaining high gas concentrations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a bottom purge system with a purge nozzle protruding upward is used to achieve high maximum concentration of purge gas, then the purging effectiveness is improved, but the nozzle is likely to hit against or be caught on the FOUP before positioning, leading to placement failure
Solution Approach 1:
The purge nozzle is designed to be movable relative to the table surface. The driving mechanism moves the purge nozzle upward when the FOUP is placed on the table, preventing contact between the nozzle and the FOUP bottom surface during placement, while allowing the nozzle to contact the FOUP bottom surface for purging after positioning is complete.
2Reliability
If a bottom purge system with a protruding purge nozzle is used to achieve high maximum concentration of purge gas, then the purging effectiveness is improved, but the injector made of resin may rub against the purge nozzle and wear during FOUP placement
Solution Approach 1:
The purge nozzle is designed to be movable relative to the table surface. The driving mechanism moves the purge nozzle upward when the FOUP is placed on the table, preventing contact between the nozzle and the FOUP bottom surface during placement, while allowing the nozzle to contact the FOUP bottom surface for purging after positioning is complete.
3Device complexity
If a front purge system is used to simplify the purging structure, then the device complexity is reduced, but the maximum concentration of purge gas in the FOUP atmosphere is lower due to direct communication with the semiconductor manufacturing apparatus internal space
Solution Approach 1:
The purging system is segmented into two separate spaces: the FOUP internal space and the semiconductor manufacturing apparatus internal space. The FOUP lid is opened to allow the purge nozzle to contact the FOUP bottom surface directly, creating a sealed purging environment that prevents direct communication between the two spaces during purging operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient and accurate purging with reduced size and cost, ensuring high gas concentrations within the FOUP, preventing contamination and maintaining wafer quality.
Implementation Method 1
the nozzle main body is vertically moved relative to the holder by regulating a pressure in a pressure-regulated space that is formed between the nozzle main body and the holder
Data Source
AI summary
A purge nozzle unit 1 includes a nozzle main body 2 including a trunk 41 and a collar section 8 protruding outward from the trunk 41 and a holder 3 including a side wall 31 that is in slidable contact with an outward face of the collar section 8 and a bottom wall 33 having a through hole 32 with which an outward face of the trunk 41 is in slidable contact and is configured such that a vent 30 in communication with the outside is formed in the holder 3 and the nozzle main body 2 is vertically moved relative to the holder 3 by regulating a pressure in a pressure-regulated space S formed between the nozzle main body 2 and the holder 3 and in communication with the vent 30.