Purging Apparatus Nozzle Configuration for Substrate Humidity Control
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Solution Overview
Problem
Semiconductor wafers continue to be contaminated with particles post-plasma etching due to reactions with moisture in substrate storage containers, leading to unnecessary etching and yield reduction, despite existing purging techniques.
Innovation Solution
A purging apparatus with an upper nozzle and side nozzles that supply dry gas obliquely downwardly and alternately to form an air curtain and ensure even distribution, maintaining low humidity within the container to prevent moisture reactions and particle formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitrogen gas is enclosed in the substrate storage container to prevent entrance of contaminants, then cleanliness is maintained, but particles generated during plasma etching react with moisture to cause contamination and unnecessary etching
Solution Approach 1:
The patent changes the humidity parameter inside the substrate storage container by introducing a purging system that supplies dry gas. This parameter change prevents moisture-related reactions of particles generated during plasma etching, thereby eliminating contamination and unnecessary etching while maintaining the cleanliness benefits of nitrogen gas enclosure.
Solution Approach 2:
The patent introduces dry gas as an intermediary substance that flows through the substrate storage container. This intermediary prevents direct contact between moisture and particles generated during plasma etching, acting as a protective medium that maintains cleanliness while preventing harmful reactions.
2Manufacturing precision
If purge gas is injected onto wafers to remove particles, then some particle removal is achieved, but particles still adhere to wafers due to humidity-induced reactions
Solution Approach 1:
The patent fundamentally changes the humidity parameter of the environment inside the substrate storage container. By maintaining low humidity through continuous dry gas supply, it prevents moisture-induced particle adhesion to wafers, achieving complete particle removal effectiveness and reliable wafer cleanliness.
3Reliability
If dry gas is supplied to maintain low humidity, then particle reaction prevention is achieved, but gas distribution uniformity must be ensured to avoid interference and stagnation
Solution Approach 1:
The patent segments the gas supply system into multiple nozzles positioned at different locations and orientations. This segmentation ensures uniform gas distribution throughout the substrate storage container, preventing stagnation and interference zones while maintaining reliable humidity control through coordinated operation of multiple gas supply points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively maintains low humidity in substrate storage containers, preventing particle formation and unnecessary etching, thereby preserving the condition of substrates post-plasma etching.
Implementation Method 1
supply a dry gas obliquely downwardly to a side opposite to the substrate storage container and over the entire surface of the width of the opening
Implementation Method 2
a plurality of side nozzles provided at both left and right sides of the opening of the substrate storage container, respectively, and each configured to supply a dry gas towards the inside of the substrate storage container
Data Source
AI summary
Provided is a purging apparatus including an upper nozzle provided above an opening of a substrate storage container and configured to supply a dry gas obliquely downwardly to a side opposite to the opening of the substrate storage container and over the entire surface of the width of the opening of the substrate storage container; and a plurality of side nozzles provided at both left and right sides of the opening of the substrate storage container, respectively, and each configured to supply the dry gas towards the inside of the substrate storage container from an outside of the opening of the substrate storage container. Each of the side nozzles is longer than a height of the opening of the substrate storage container and is provided with a plurality of supply holes formed thereon at predetermined intervals in a vertical direction.