Purging Method for Substrate Processing Container
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Solution Overview
Problem
Current purging methods in film forming processes for substrates do not adequately reduce particle contamination within processing containers, despite the use of high-pressure purge gases.
Innovation Solution
A purging method involving a first process of pressurizing an inert gas and discharging it into the processing container, followed by a second process of supplying a hydrogen gas, nitrogen-containing gas, or rare gas, or a combination of these gases, to effectively remove particles and contaminants.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-pressure purge gas is supplied into the processing container, then particle removal capability is improved, but particle contamination is not sufficiently reduced
Solution Approach 1:
The purging process is divided into multiple sequential steps with different gas types and pressures. The first step uses high-pressure inert gas for initial particle removal, followed by second and third steps using different gases at reduced pressures to remove remaining particles and prevent re-adhesion, achieving comprehensive particle contamination reduction
Solution Approach 2:
The patent changes gas parameters systematically: first using inert gas at high pressure (0.1-0.5 MPa), then switching to reactive gas at medium pressure (0.03-0.1 MPa), and finally using inert gas again at low pressure (0.01-0.03 MPa). This parameter variation optimizes particle removal at each stage while preventing contamination
2Productivity
If inert gas is used for purging, then particle removal is achieved, but sufficient particle contamination reduction is not obtained
Solution Approach 1:
The patent combines inert gas and reactive gas in a sequential purging process. Inert gas (Ar or N2) is used in the first and third steps for particle removal and protection, while reactive gas (H2, NF3, or CF4) is used in the second step to chemically interact with and remove adhered particles, achieving synergistic contamination reduction
Solution Approach 2:
The patent utilizes the reactive properties of certain gases (H2, NF3, CF4) that could potentially cause contamination under normal conditions, but in the controlled purging environment, these reactive gases effectively break down and remove adhered organic particles and film deposits from the processing container, converting potential harm into beneficial particle removal
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces particle contamination on wafers by utilizing a combination of inert and reactive gases to create a shock wave and viscous flow, efficiently removing deposits and particles from the processing container.
Implementation Method 1
utilizing a combination of inert and reactive gases to create a shock wave and viscous flow
Implementation Method 2
utilizing a combination of inert and reactive gases to create a shock wave and viscous flow
Data Source
AI summary
A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.